Invention Application
US20140167259A1 PILLAR ON PAD INTERCONNECT STRUCTURES, SEMICONDUCTOR DEVICES INCLUDING SAME AND RELATED METHODS
有权
支柱互连结构的支柱,包括其的半导体器件及相关方法
- Patent Title: PILLAR ON PAD INTERCONNECT STRUCTURES, SEMICONDUCTOR DEVICES INCLUDING SAME AND RELATED METHODS
- Patent Title (中): 支柱互连结构的支柱,包括其的半导体器件及相关方法
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Application No.: US14186869Application Date: 2014-02-21
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Publication No.: US20140167259A1Publication Date: 2014-06-19
- Inventor: Owen R. Fay , Luke G. England , Christopher J. Gambee
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Main IPC: H01L23/00
- IPC: H01L23/00

Abstract:
Methods of fabricating interconnect structures for semiconductor dice comprise forming conductive elements in contact with bond pads on an active surface over a full pillar diameter of the conductive elements, followed by application of a photodefinable material comprising a photoresist to the active surface and over the conductive elements. The polyimide material is selectively exposed and developed to remove photodefinable material covering at least tops of the conductive elements. Semiconductor dice and semiconductor die assemblies are also disclosed.
Public/Granted literature
- US09129869B2 Pillar on pad interconnect structures, semiconductor devices including same and related methods Public/Granted day:2015-09-08
Information query
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