Invention Application
- Patent Title: HEAT-DISSIPATING SUBSTRATE AND FABRICATING METHOD THEREOF
- Patent Title (中): 散热基板及其制造方法
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Application No.: US14179207Application Date: 2014-02-12
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Publication No.: US20140174940A1Publication Date: 2014-06-26
- Inventor: Chang Hyun LIM , Seog Moon CHOI , Sang Hyun SHIN , Young Ki LEE , Sung Keun PARK
- Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Applicant Address: KR Gyunggi-do
- Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Current Assignee Address: KR Gyunggi-do
- Priority: KR10-2009-0086997 20090915
- Main IPC: H05K3/02
- IPC: H05K3/02

Abstract:
Embodiments of the invention provide a heat-dissipating substrate and a fabricating method of the heat-dissipating substrate. According to various embodiments, the heat-dissipating substrate includes a plating layer divided by a first insulator formed in a division area. A metal plate is formed on an upper surface of the plating layer and filled with a second insulator at a position corresponding to the division area, with an anodized layer formed on a surface of the metal plate. A circuit layer is formed on the anodized layer which is formed on an upper surface of the metal plate. The heat-dissipating substrate and fabricating method thereof achieves thermal isolation by a first insulator formed in a division area and a second insulator.
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