发明申请
- 专利标题: SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 专利标题(中): 硅碳化硅半导体器件及其制造方法
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申请号: US13994855申请日: 2012-02-06
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公开(公告)号: US20140175459A1公开(公告)日: 2014-06-26
- 发明人: Kensaku Yamamoto , Masato Noborio , Hideo Matsuki , Hidefumi Takaya , Masahiro Sugimoto , Narumasa Soejima , Tsuyoshi Ishikawa , Yukihiko Watanabe
- 申请人: Kensaku Yamamoto , Masato Noborio , Hideo Matsuki , Hidefumi Takaya , Masahiro Sugimoto , Narumasa Soejima , Tsuyoshi Ishikawa , Yukihiko Watanabe
- 申请人地址: JP Toyota-shi, Aichi-ken JP Kariya-city, Aichi-pref.
- 专利权人: TOYOTA JIDOSHA KABUSHIKI KAISHA,DENSO CORPORATION
- 当前专利权人: TOYOTA JIDOSHA KABUSHIKI KAISHA,DENSO CORPORATION
- 当前专利权人地址: JP Toyota-shi, Aichi-ken JP Kariya-city, Aichi-pref.
- 优先权: JP2011-027995 20110211
- 国际申请: PCT/JP2012/000769 WO 20120206
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L29/16 ; H01L29/66
摘要:
A SiC semiconductor device includes: a semiconductor switching element having: a substrate, a drift layer and a base region stacked in this order; a source region and a contact region in the base region; a trench extending from a surface of the source region to penetrate the base region; a gate electrode on a gate insulating film in the trench; a source electrode electrically coupled with the source region and the base region; a drain electrode on a back side of the substrate; and multiple deep layers in an upper portion of the drift layer deeper than the trench. Each deep layer has upper and lower portions. A width of the upper portion is smaller than the lower portion.