摘要:
A SiC device includes an inversion type MOSFET having: a substrate, a drift layer, and a base region stacked in this order; source and contact regions in upper portions of the base region; a trench penetrating the source and base regions; a gate electrode on a gate insulating film in the trench; a source electrode coupled with the source and base region; a drain electrode on a back of the substrate; and multiple deep layers in an upper portion of the drift layer deeper than the trench. Each deep layer has an impurity concentration distribution in a depth direction, and an inversion layer is provided in a portion of the deep layer on the side of the trench under application of the gate voltage.
摘要:
A SiC semiconductor device includes: a semiconductor switching element having: a substrate, a drift layer and a base region stacked in this order; a source region and a contact region in the base region; a trench extending from a surface of the source region to penetrate the base region; a gate electrode on a gate insulating film in the trench; a source electrode electrically coupled with the source region and the base region; a drain electrode on a back side of the substrate; and multiple deep layers in an upper portion of the drift layer deeper than the trench. Each deep layer has upper and lower portions. A width of the upper portion is smaller than the lower portion.