Invention Application
- Patent Title: RING-SHAPED TRANSISTORS PROVIDING REDUCED SELF-HEATING
- Patent Title (中): 提供减少自加热的环形晶体管
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Application No.: US13724598Application Date: 2012-12-21
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Publication No.: US20140175514A1Publication Date: 2014-06-26
- Inventor: Ali Darwish , Hingloi Alfred Hung
- Applicant: U.S. ARMY RESEARCH LABORATORY ATTN: RDRL-LOC-I
- Applicant Address: US MD Adelphi
- Assignee: U.S. ARMY RESEARCH LABORATORY ATTN: RDRL-LOC-I
- Current Assignee: U.S. ARMY RESEARCH LABORATORY ATTN: RDRL-LOC-I
- Current Assignee Address: US MD Adelphi
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L29/40
Abstract:
A ring-shaped transistor includes a set of gates. Each gate of the set is disposed between a corresponding source and a corresponding drain. The set of gates are arranged such that all of the set of gates cannot be aligned with fewer than three imaginary straight lines drawn through the gates, with one of the imaginary straight lines passing only once though each of the set of gates.
Public/Granted literature
- US08816397B2 Ring-shaped transistors providing reduced self-heating Public/Granted day:2014-08-26
Information query
IPC分类:
