发明申请
US20140175628A1 COPPER WIRE BONDING STRUCTURE IN SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF 审中-公开
半导体器件中的铜线结构及其制造方法

COPPER WIRE BONDING STRUCTURE IN SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
摘要:
A semiconductor device comprises a first top electrode and a second top electrode at a front surface of the die, at least a Ni plating layer and an Au plating layer overlaying the Ni plating layer are formed on each of the first top electrode and the second top electrode. A copper clip attaches on the Au plating layer of the second top electrode. A gold (Au) stud bump is formed on the Au plating layer of the first top electrode with a copper wire connected on the stud bump. The Au stud bump is thicker than a thickness of the Au plating layer and thinner than a thickness of the copper clip to avoid copper wire NSOP (non-stick on pad) problem due to Ni plating layer diffusion during the solder reflow process in the copper clip attachment.
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