发明申请
US20140186990A1 CVD APPARATUS AND METHOD FOR FORMING CVD FILM 有权
CVD装置和形成CVD膜的方法

  • 专利标题: CVD APPARATUS AND METHOD FOR FORMING CVD FILM
  • 专利标题(中): CVD装置和形成CVD膜的方法
  • 申请号: US14122028
    申请日: 2012-05-31
  • 公开(公告)号: US20140186990A1
    公开(公告)日: 2014-07-03
  • 发明人: Masaki Kusuhara
  • 申请人: Masaki Kusuhara
  • 申请人地址: JP Tokyo
  • 专利权人: WACOM
  • 当前专利权人: WACOM
  • 当前专利权人地址: JP Tokyo
  • 优先权: JP2011-125340 20110603; JP2012-081778 20120330
  • 国际申请: PCT/JP2012/064176 WO 20120531
  • 主分类号: H01J37/32
  • IPC分类号: H01J37/32 H01L31/0216
CVD APPARATUS AND METHOD FOR FORMING CVD FILM
摘要:
As the antireflection film of solar cells, a nitride film was used which was conventionally formed by reduced pressure plasma CVD. However, reducing solar cell production costs has been difficult due to high equipment costs and processing costs involved in reduced pressure treatment. By means of a plasma head comprising multiple plasma head unit members which, arranged in rows, apply an electric or magnetic field via a dielectric member and generate plasma, this CVD film production method forms a nitride film with atmospheric pressure plasma CVD using dielectric-barrier discharge. The dielectric discharge is capable of forming a glow discharge plasma stable even at atmospheric pressure, and, by generating and reacting different plasmas from neighboring plasma outlets, it is possible to form a nitride film in atmospheric pressure, making it possible to produce low-cost solar cells.
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