Invention Application
US20140187029A1 VERTICAL TYPE MEMORY DEVICE 有权
垂直型存储器件

VERTICAL TYPE MEMORY DEVICE
Abstract:
A method of fabricating a semiconductor device, comprising: forming a plurality of memory cell strings; coupling an interconnection to at least two of the memory cell strings; and coupling a bitline to the interconnection. The interconnection includes a body extending along a first direction and a protrusion protruding from the body along a second direction.
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