Invention Application
- Patent Title: VERTICAL TYPE MEMORY DEVICE
- Patent Title (中): 垂直型存储器件
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Application No.: US14200002Application Date: 2014-03-06
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Publication No.: US20140187029A1Publication Date: 2014-07-03
- Inventor: KWANG SOO SEOL , SEONG SOON CHO , BYUNGJOO GO , HONGSOO KIM
- Applicant: KWANG SOO SEOL , SEONG SOON CHO , BYUNGJOO GO , HONGSOO KIM
- Priority: KR10-2012-0110751 20121005; KR10-2013-0024624 20130307
- Main IPC: G11C5/06
- IPC: G11C5/06 ; H01L21/768

Abstract:
A method of fabricating a semiconductor device, comprising: forming a plurality of memory cell strings; coupling an interconnection to at least two of the memory cell strings; and coupling a bitline to the interconnection. The interconnection includes a body extending along a first direction and a protrusion protruding from the body along a second direction.
Public/Granted literature
- US09287167B2 Vertical type memory device Public/Granted day:2016-03-15
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