发明申请
- 专利标题： Semiconductor Devices and Methods of Manufacture Thereof
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US13734892申请日： 2013-01-04
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公开(公告)号： US20140191400A1公开(公告)日： 2014-07-10
- 发明人: Ying-Hsueh Chang Chien , Yu-Ming Lee , Man-Kit Leung , Chi-Ming Yang
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L23/522
摘要：
Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes providing a workpiece including an insulating material layer disposed thereon. The insulating material layer includes a trench formed therein. The method includes forming a barrier layer on the sidewalls of the trench using a surface modification process and a surface treatment process.
公开/授权文献
- US08871639B2 Semiconductor devices and methods of manufacture thereof 公开/授权日：2014-10-28
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