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公开(公告)号：US20200066633A1
公开(公告)日：2020-02-27
申请号：US16672180
申请日：2019-11-01
IPC分类号： H01L23/522 , H01L23/532 , H01L21/768
摘要： A semiconductor device includes providing a workpiece including an insulating material layer disposed thereon. The insulating material layer includes a trench formed therein. A barrier layer on the sidewalls of the trench is formed using a surface modification process and a surface treatment process.
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公开(公告)号：US10510655B2
公开(公告)日：2019-12-17
申请号：US14490216
申请日：2014-09-18
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L23/522 , H01L21/768 , H01L23/532
摘要： A semiconductor device includes providing a workpiece including an insulating material layer disposed thereon. The insulating material layer includes a trench formed therein. A barrier layer on the sidewalls of the trench is formed using a surface modification process and a surface treatment process.
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公开(公告)号：US08871639B2
公开(公告)日：2014-10-28
申请号：US13734892
申请日：2013-01-04
IPC分类号： H01L21/4763 , H01L23/522 , H01L21/768
CPC分类号： H01L23/5226 , H01L21/76814 , H01L21/76826 , H01L21/76841 , H01L21/76844 , H01L21/76867 , H01L23/53233 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , Y02P80/30 , H01L2924/00
摘要： Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes providing a workpiece including an insulating material layer disposed thereon. The insulating material layer includes a trench formed therein. The method includes forming a barrier layer on the sidewalls of the trench using a surface modification process and a surface treatment process.
摘要翻译： 公开了半导体器件及其制造方法。 在一个实施例中，制造半导体器件的方法包括提供包括设置在其上的绝缘材料层的工件。 绝缘材料层包括形成在其中的沟槽。 该方法包括使用表面改性方法和表面处理方法在沟槽的侧壁上形成阻挡层。
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公开(公告)号：US11264321B2
公开(公告)日：2022-03-01
申请号：US16672180
申请日：2019-11-01
IPC分类号： H01L23/522 , H01L21/768 , H01L23/532
摘要： A semiconductor device includes providing a workpiece including an insulating material layer disposed thereon. The insulating material layer includes a trench formed therein. A barrier layer on the sidewalls of the trench is formed using a surface modification process and a surface treatment process.
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公开(公告)号：US20150001723A1
公开(公告)日：2015-01-01
申请号：US14490216
申请日：2014-09-18
IPC分类号： H01L23/522 , H01L23/532
CPC分类号： H01L23/5226 , H01L21/76814 , H01L21/76826 , H01L21/76841 , H01L21/76844 , H01L21/76867 , H01L23/53233 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , Y02P80/30 , H01L2924/00
摘要： A semiconductor device includes providing a workpiece including an insulating material layer disposed thereon. The insulating material layer includes a trench formed therein. A barrier layer on the sidewalls of the trench is formed using a surface modification process and a surface treatment process.
摘要翻译： 半导体器件包括提供包括设置在其上的绝缘材料层的工件。 绝缘材料层包括形成在其中的沟槽。 使用表面改性工艺和表面处理工艺形成沟槽侧壁上的阻挡层。
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公开(公告)号：US20140191400A1
公开(公告)日：2014-07-10
申请号：US13734892
申请日：2013-01-04
IPC分类号： H01L21/768 , H01L23/522
CPC分类号： H01L23/5226 , H01L21/76814 , H01L21/76826 , H01L21/76841 , H01L21/76844 , H01L21/76867 , H01L23/53233 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , Y02P80/30 , H01L2924/00
摘要： Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes providing a workpiece including an insulating material layer disposed thereon. The insulating material layer includes a trench formed therein. The method includes forming a barrier layer on the sidewalls of the trench using a surface modification process and a surface treatment process.
摘要翻译： 公开了半导体器件及其制造方法。 在一个实施例中，制造半导体器件的方法包括提供包括设置在其上的绝缘材料层的工件。 绝缘材料层包括形成在其中的沟槽。 该方法包括使用表面改性方法和表面处理方法在沟槽的侧壁上形成阻挡层。
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