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公开(公告)号：US11602821B2
公开(公告)日：2023-03-14
申请号：US16746058
申请日：2020-01-17
发明人： James Jeng-Jyi Hwang , He Hui Peng , Jiann Lih Wu , Chi-Ming Yang
IPC分类号： B24B47/12 , H01L21/304 , B24B57/02 , B24B37/20
摘要： A wafer polishing head is provided. The wafer polishing head includes a carrier head, a plurality of piezoelectric actuators disposed on the carrier head, and a membrane disposed over the plurality of piezoelectric actuators. The plurality of piezoelectric actuators is configured to provide mechanical forces on the membrane and generate an electrical charge when receiving counterforces of the mechanical forces through the membrane. A wafer polishing system and a method for polishing a substrate using the same are also provided.
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公开(公告)号：US11255658B2
公开(公告)日：2022-02-22
申请号：US17002677
申请日：2020-08-25
摘要： An ellipsometer includes a light source, a polarizer, an asymmetric wavelength retarder, an analyzer and an optical detection component. The light source is configured to provide a light beam having multiple wavelengths incident to a sample. The polarizer is disposed between the light source and the sample, and configured to polarize the light beam. The asymmetric wavelength retarder is configured to provide a varied retardation effect on the light beam varied by wavelength. The analyzer is configured to analyze a polarization state of the light beam reflected by the sample. The optical detection component is configured to detect the light beam from the analyzer.
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公开(公告)号：US10991604B2
公开(公告)日：2021-04-27
申请号：US16448888
申请日：2019-06-21
发明人： Jyh-Shiou Hsu , Chi-Ming Yang , Tzu Jeng Hsu
IPC分类号： H01L21/67 , H01L21/768 , C25D5/34 , C25D7/12 , C23C28/02 , C25D3/38 , H01L23/532
摘要： A method of manufacturing a semiconductor structure includes loading the substrate from a first load lock chamber into a first processing chamber; disposing a conductive layer over the substrate in the first processing chamber; loading the substrate from the first processing chamber into the first load lock chamber; loading the substrate from the first load lock chamber into an enclosure filled with an inert gas and disposed between the first load lock chamber and a second load lock chamber; loading the substrate from the enclosure into the second load lock chamber; loading the substrate from the second load lock chamber into a second processing chamber; disposing a conductive member over the conductive layer in the second processing chamber; loading the substrate from the second processing chamber into the second load lock chamber; and loading the substrate from the second load lock chamber into a second load port.
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公开(公告)号：US10510655B2
公开(公告)日：2019-12-17
申请号：US14490216
申请日：2014-09-18
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L23/522 , H01L21/768 , H01L23/532
摘要： A semiconductor device includes providing a workpiece including an insulating material layer disposed thereon. The insulating material layer includes a trench formed therein. A barrier layer on the sidewalls of the trench is formed using a surface modification process and a surface treatment process.
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公开(公告)号：US10509311B1
公开(公告)日：2019-12-17
申请号：US15992017
申请日：2018-05-29
发明人： Chung-Chieh Lee , Feng Yuan Hsu , Chyi Shyuan Chern , Chi-Ming Yang , Tsiao-Chen Wu , Chun-Lin Chang
摘要： A method for generating an electromagnetic radiation includes the following operations. A target material is introduced in a chamber. A light beam is irradiated on the target material in the chamber to generate plasma and an electromagnetic radiation. The electromagnetic radiation is collected with an optical device. A gas mixture is introduced in the chamber. The gas mixture includes a first buffer gas reactive to the target material, and a second buffer gas to slow down debris of the target material and/or plasma by-product, so as to increase an reaction efficiency of the target material and the first buffer gas, and to reduce deposition of the debris of the target material and/or the plasma by-product on the optical device.
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公开(公告)号：US08871639B2
公开(公告)日：2014-10-28
申请号：US13734892
申请日：2013-01-04
IPC分类号： H01L21/4763 , H01L23/522 , H01L21/768
CPC分类号： H01L23/5226 , H01L21/76814 , H01L21/76826 , H01L21/76841 , H01L21/76844 , H01L21/76867 , H01L23/53233 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , Y02P80/30 , H01L2924/00
摘要： Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes providing a workpiece including an insulating material layer disposed thereon. The insulating material layer includes a trench formed therein. The method includes forming a barrier layer on the sidewalls of the trench using a surface modification process and a surface treatment process.
摘要翻译： 公开了半导体器件及其制造方法。 在一个实施例中，制造半导体器件的方法包括提供包括设置在其上的绝缘材料层的工件。 绝缘材料层包括形成在其中的沟槽。 该方法包括使用表面改性方法和表面处理方法在沟槽的侧壁上形成阻挡层。
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公开(公告)号：US20140159243A1
公开(公告)日：2014-06-12
申请号：US14182912
申请日：2014-02-18
IPC分类号： H01L23/538 , H01L21/67
CPC分类号： H01L23/5386 , H01L21/02074 , H01L21/28079 , H01L21/67011 , H01L21/7684 , H01L29/495 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure provides a method of fabricating a semiconductor device, a semiconductor device fabricated by such a method, and a chemical mechanical polishing (CMP) tool for performing such a method. In one embodiment, a method of fabricating a semiconductor device includes providing an integrated circuit (IC) wafer including a metal conductor in a trench of a dielectric layer over a substrate, and performing a chemical mechanical polishing (CMP) process to planarize the metal conductor and the dielectric layer. The method further includes cleaning the planarized metal conductor and dielectric layer to remove residue from the CMP process, rinsing the cleaned metal conductor and dielectric layer with an alcohol, and drying the rinsed metal conductor and dielectric layer in an inert gas environment.
摘要翻译： 本公开提供了一种制造半导体器件的方法，通过这种方法制造的半导体器件和用于执行这种方法的化学机械抛光（CMP）工具。 在一个实施例中，制造半导体器件的方法包括在衬底上的电介质层的沟槽中提供包括金属导体的集成电路（IC）晶片，以及执行化学机械抛光（CMP）工艺以平坦化金属导体 和电介质层。 该方法还包括清洁平坦化的金属导体和电介质层以除去CMP工艺中的残留物，用醇漂洗清洁的金属导体和介电层，并在惰性气体环境中干燥漂洗的金属导体和电介质层。
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公开(公告)号：US20220100087A1
公开(公告)日：2022-03-31
申请号：US17177837
申请日：2021-02-17
发明人： Chih-Cheng Liu , Yi-Chen Kuo , Yen-Yu Chen , Jr-Hung Li , Chi-Ming Yang , Tze-Liang Lee
摘要： An organometallic precursor for extreme ultraviolet (EUV) lithography is provided. An organometallic precursor includes a chemical formula of MaXbLc, where M is a metal, X is a multidentate aromatic ligand that includes a pyrrole-like nitrogen and a pyridine-like nitrogen, L is an extreme ultraviolet (EUV) cleavable ligand, a is between 1 and 2, b is equal to or greater than 1, and c is equal to or greater than 1.
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公开(公告)号：US20170205705A1
公开(公告)日：2017-07-20
申请号：US14996966
申请日：2016-01-15
发明人： Jeng-Shin Ma , Tsiao-Chen Wu , Chi-Ming Yang , Chyi Shyuan Chern , Chih-Cheng Lin , Yun-Yue Lin
IPC分类号： G03F1/64
摘要： A method for manufacturing a pellicle includes: providing a supporting substrate; forming an oxide layer over the supporting substrate; forming a metal layer over the oxide layer; forming a graphene layer over the metal layer; and removing at least a portion of the supporting substrate and the oxide layer. An associated method includes: providing a supporting substrate; forming a first silicon carbide (SiC) layer or a diamond layer over the supporting substrate; forming a graphene layer over the SiC layer or the diamond layer; and removing at least a portion of the supporting substrate and the first silicon carbide (SiC) layer or the diamond layer; wherein the pellicle is at least partially transparent to extreme ultraviolet (EUV) radiation. An associated pellicle is also disclosed.
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公开(公告)号：US20150221561A1
公开(公告)日：2015-08-06
申请号：US14684953
申请日：2015-04-13
IPC分类号： H01L21/66 , H01L21/265
CPC分类号： H01L22/10 , H01J37/244 , H01J37/3171 , H01J2237/24542 , H01J2237/30455 , H01J2237/31703 , H01L21/265
摘要： A method comprises placing a wafer and a ring-shaped beam profiler on a wafer holder, wherein the ring-shaped beam profiler is adjacent to the wafer, moving a first sensor and a second sensor simultaneously with the wafer holder, receiving a first sensed signal and a second sensed signal from the first sensor and the second sensor respectively and adjusting an ion beam generated by an ion beam generator based upon the first sensed signal and the second sensed signal.
摘要翻译： 一种方法包括将晶片和环形光束轮廓仪放置在晶片保持器上，其中环形光束轮廓仪邻近晶片，与晶片保持器同时移动第一传感器和第二传感器，接收第一感测信号 以及分别来自第一传感器和第二传感器的第二检测信号，并且基于第一感测信号和第二感测信号调整由离子束发生器产生的离子束。
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