发明申请
- 专利标题： THIN-FILM TRANSISTOR
- 专利标题（中）： 薄膜晶体管
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申请号： US14238019申请日： 2012-08-08
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公开(公告)号： US20140197408A1公开(公告)日： 2014-07-17
- 发明人: Yuki Tsuruma , Kazuaki Ebata , Shigekazu Tomai , Shigeo Matsuzaki
- 申请人： Yuki Tsuruma , Kazuaki Ebata , Shigekazu Tomai , Shigeo Matsuzaki
- 专利权人： IDEMITSU KOSAN CO., LTD.
- 当前专利权人： IDEMITSU KOSAN CO., LTD.
- 优先权： JP2011-176315 20110811
- 国际申请： PCT/JP2012/005028 WO 20120808
- 主分类号： H01L29/786
- IPC分类号： H01L29/786
摘要：
A thin film transistor (1) includes a source electrode (50), a drain electrode (60), a gate electrode (20), a gate insulating film (30), and a channel layer (40) that is formed of an oxide semiconductor, the channel layer (40) having an average carrier concentration of 1×1016/cm3 to 5×1019/cm3, and including a high carrier concentration region (42) that is situated on the side of the gate insulating film (30) and has a carrier concentration higher than the average carrier concentration, and the channel layer (40) having a substantially homogenous composition.
公开/授权文献
- US09178076B2 Thin-film transistor 公开/授权日：2015-11-03
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