摘要:
A sputtering target including a sintered body: the sintered body including: indium oxide doped with Ga or indium oxide doped with Al, and a positive tetravalent metal in an amount of exceeding 100 at. ppm and 1100 at. ppm or less relative to the total of Ga and indium, or Al and indium, the crystal structure of the sintered body substantially including a bixbyite structure of indium oxide.
摘要:
A stacked layer structure including an oxide layer and an insulating layer, the oxide layer having a carrier concentration of 1018/cm3 or less and an average crystal diameter of 1 μm or more; and the crystals of the oxide layer being arranged in a columnar shape on the surface of the insulating layer.
摘要:
A thin film transistor (1) includes a source electrode (50), a drain electrode (60), a gate electrode (20), a gate insulating film (30), and a channel layer (40) that is formed of an oxide semiconductor, the channel layer (40) having an average carrier concentration of 1×1016/cm3 to 5×1019/cm3, and including a high carrier concentration region (42) that is situated on the side of the gate insulating film (30) and has a carrier concentration higher than the average carrier concentration, and the channel layer (40) having a substantially homogenous composition.
摘要翻译:薄膜晶体管(1)包括源电极(50),漏电极(60),栅极电极(20),栅极绝缘膜(30)和由氧化物形成的沟道层(40) 半导体,平均载流子浓度为1×10 16 / cm 3至5×10 19 / cm 3的沟道层(40),并且包括位于栅极绝缘膜(30)一侧的高载流子浓度区域(42) 并且具有高于平均载流子浓度的载流子浓度,并且沟道层(40)具有基本均匀的组成。
摘要:
A thin film transistor (1) includes a source electrode (50), a drain electrode (60), a gate electrode (20), a gate insulating film (30), and a channel layer (40) that is formed of an oxide semiconductor, the channel layer (40) having an average carrier concentration of 1×1016/cm3 to 5×1019/cm3, and including a high carrier concentration region (42) that is situated on the side of the gate insulating film (30) and has a carrier concentration higher than the average carrier concentration, and the channel layer (40) having a substantially homogenous composition.
摘要翻译:薄膜晶体管(1)包括源电极(50),漏电极(60),栅极电极(20),栅极绝缘膜(30)和由氧化物形成的沟道层(40) 半导体,平均载流子浓度为1×10 16 / cm 3至5×10 19 / cm 3的沟道层(40),并且包括位于栅极绝缘膜(30)一侧的高载流子浓度区域(42) 并且具有高于平均载流子浓度的载流子浓度,并且沟道层(40)具有基本均匀的组成。
摘要:
A sputtering target including a sintered body: the sintered body including: indium oxide doped with Ga or indium oxide doped with Al, and a positive tetravalent metal in an amount of exceeding 100 at. ppm and 1100 at. ppm or less relative to the total of Ga and indium, or Al and indium, the crystal structure of the sintered body substantially including a bixbyite structure of indium oxide.
摘要:
A stacked layer structure including an oxide layer and an insulating layer, the oxide layer having a carrier concentration of 1018/cm3 or less and an average crystal diameter of 1 μm or more; and the crystals of the oxide layer being arranged in a columnar shape on the surface of the insulating layer.