发明申请
US20140205937A1 MASK BLANK, TRANSFER MASK, METHOD OF MANUFACTURING A TRANSFER MASK, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
审中-公开
掩模空白，转印掩模，制造转印掩模的方法以及制造半导体器件的方法
- 专利标题： MASK BLANK, TRANSFER MASK, METHOD OF MANUFACTURING A TRANSFER MASK, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
- 专利标题（中）： 掩模空白，转印掩模，制造转印掩模的方法以及制造半导体器件的方法
-
申请号： US14222794申请日： 2014-03-24
-
公开(公告)号： US20140205937A1公开(公告)日： 2014-07-24
- 发明人: Noriyuki Sakaya , Osamu Nozawa
- 申请人： HOYA CORPORATION
- 申请人地址： JP Tokyo
- 专利权人： HOYA CORPORATION
- 当前专利权人： HOYA CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JP2011-200195 20110914
- 主分类号： G03F1/26
- IPC分类号： G03F1/26 ; G03F7/20
摘要：
A mask blank is used for manufacturing a binary mask adapted to be applied with ArF excimer laser exposure light and has a light-shielding film for forming a transfer pattern on a transparent substrate. The light-shielding film has a laminated structure of a lower layer and an upper layer and has an optical density of 2.8 or more for the exposure light. The lower layer is made of a material containing tantalum and nitrogen and has a thickness of 33 nm or more. The upper layer is made of a material containing tantalum and oxygen and has a thickness of 3 nm or more. The phase difference between the exposure light transmitted through the light-shielding film and the exposure light transmitted in air for a distance equal to the thickness of the light-shielding film is 60 degrees or less.
公开/授权文献
信息查询
