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1.发明授权Mask blank, transfer mask, method of manufacturing a transfer mask, and method of manufacturing a semiconductor device 有权掩模毛坯，转印掩模，制造转印掩模的方法以及制造半导体器件的方法公开(公告)号：US09354509B2
公开(公告)日：2016-05-31
申请号：US14222794
申请日：2014-03-24
申请人： HOYA CORPORATION
发明人： Noriyuki Sakaya , Osamu Nozawa
摘要： A mask blank is used for manufacturing a binary mask adapted to be applied with ArF excimer laser exposure light and has a light-shielding film for forming a transfer pattern on a transparent substrate. The light-shielding film has a laminated structure of a lower layer and an upper layer and has an optical density of 2.8 or more for the exposure light. The lower layer is made of a material containing tantalum and nitrogen and has a thickness of 33 nm or more. The upper layer is made of a material containing tantalum and oxygen and has a thickness of 3 nm or more. The phase difference between the exposure light transmitted through the light-shielding film and the exposure light transmitted in air for a distance equal to the thickness of the light-shielding film is 60 degrees or less.
摘要翻译： 掩模坯料用于制造适于施加ArF准分子激光曝光光的二值掩模，并且具有用于在透明基板上形成转印图案的遮光膜。 遮光膜具有下层和上层的层叠结构，并且曝光用光的密度为2.8以上。 下层由含有钽和氮的材料制成，厚度为33nm以上。 上层由含有钽和氧的材料制成，厚度为3nm以上。 透过遮光膜的曝光光与在空气中透射距离等于遮光膜的厚度的曝光光的相位差为60度以下。
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2.发明申请MASK BLANK, TRANSFER MASK, METHOD OF MANUFACTURING A TRANSFER MASK, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 审中-公开掩模空白，转印掩模，制造转印掩模的方法以及制造半导体器件的方法公开(公告)号：US20140205937A1
公开(公告)日：2014-07-24
申请号：US14222794
申请日：2014-03-24
申请人： HOYA CORPORATION
发明人： Noriyuki Sakaya , Osamu Nozawa
摘要： A mask blank is used for manufacturing a binary mask adapted to be applied with ArF excimer laser exposure light and has a light-shielding film for forming a transfer pattern on a transparent substrate. The light-shielding film has a laminated structure of a lower layer and an upper layer and has an optical density of 2.8 or more for the exposure light. The lower layer is made of a material containing tantalum and nitrogen and has a thickness of 33 nm or more. The upper layer is made of a material containing tantalum and oxygen and has a thickness of 3 nm or more. The phase difference between the exposure light transmitted through the light-shielding film and the exposure light transmitted in air for a distance equal to the thickness of the light-shielding film is 60 degrees or less.
摘要翻译： 掩模坯料用于制造适于施加ArF准分子激光曝光光的二值掩模，并且具有用于在透明基板上形成转印图案的遮光膜。 遮光膜具有下层和上层的层叠结构，并且曝光用光的密度为2.8以上。 下层由含有钽和氮的材料制成，厚度为33nm以上。 上层由含有钽和氧的材料制成，厚度为3nm以上。 透过遮光膜的曝光光与在空气中透射距离等于遮光膜的厚度的曝光光的相位差为60度以下。
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