公开(公告)号：US11630388B2

公开(公告)日：2023-04-18

申请号：US17128499

申请日：2020-12-21

申请人： HOYA CORPORATION

发明人： Osamu Nozawa ,  Ryo Ohkubo ,  Hiroaki Shishido

IPC分类号： G03F1/32 ,  G03F1/54 ,  G03F1/80 ,  G03F1/26 ,  G03F1/38 ,  G03F7/20 ,  H01L21/033

摘要： Provided is a mask blank (100) for manufacturing a phase shift mask, the mask blank enabling formation of a high-precision and fine pattern on a light shielding film.
The mask blank (100) in which a phase shift film (2) made of a material containing silicon, a light shielding film (3) made of a material containing chromium, oxygen, and carbon, and a hard mask film (4) made of a material containing one or more elements selected from silicon and tantalum are provided in this order on a transparent substrate (1) is characterized in that the light shielding film (3) is a single layer film having a composition gradient portion with an increased oxygen content at a surface on the hard mask film (4) side and in a region close thereto, the light shielding film (3) has a maximum peak of N1s narrow spectrum obtained by analysis of X-ray photoelectron spectroscopy of lower detection limit or less, and a part of the light shielding film (3) excluding the composition gradient portion has a chromium content of 50 atom % or more and has a maximum peak of Cr2p narrow spectrum obtained by analysis of X-ray photoelectron spectroscopy at binding energy of 574 eV or less.

公开(公告)号：US10935881B2

公开(公告)日：2021-03-02

申请号：US15743783

申请日：2016-07-11

申请人： HOYA CORPORATION

发明人： Takenori Kajiwara ,  Hiroaki Shishido ,  Osamu Nozawa

IPC分类号： G03F1/32 ,  G03F1/54 ,  G03F1/58 ,  G03F1/80 ,  G03F1/82 ,  H01L21/033

摘要： An object is to provide a mask blank for manufacturing a phase shift mask in which a thermal expansion of a phase shift pattern, which is caused when exposure light is radiated onto the phase shift pattern, and displacement of the phase shift pattern are suppressed to be small. A phase shift film has a function of transmitting exposure light from an ArF excimer laser at a transmittance of 2% or higher and 30% or lower and a function of generating a phase difference of 150° or larger and 180° or smaller between the exposure light that has been transmitted through the phase shift film and the exposure light that has passed through air by a distance equal to a thickness of the phase shift film. The phase shift film is formed of a material containing a metal and silicon, and has a structure in which a lower layer and an upper layer are laminated in the stated order from a transparent substrate side. The lower layer has a refractive index n at a wavelength of the exposure light that is smaller than that of the transparent substrate. The upper layer has a refractive index n at the wavelength of the exposure light that is larger than that of the transparent substrate. The lower layer has an extinction coefficient k at the wavelength of the exposure light that is larger than that of the upper layer. The upper layer has a thickness that is larger than that of the lower layer.

公开(公告)号：US10571797B2

公开(公告)日：2020-02-25

申请号：US15553634

申请日：2015-12-24

申请人： HOYA CORPORATION

发明人： Osamu Nozawa ,  Hiroaki Shishido ,  Ryo Ohkubo

IPC分类号： G03F1/32 ,  G03F1/54 ,  G03F1/78 ,  G03F1/80 ,  H01L21/308 ,  G03F7/20

摘要： A mask blank is provided, which makes it possible to form a fine transfer pattern in a light-semitransmissive film with high accuracy even if the light-semitransmissive film is made of a material containing silicon and a light shielding film is made of a material containing chromium.The mask blank 100 has a structure in which the light-semitransmissive film 2, etching mask film 3, and light shielding film 4 are laminated in this order on the transparent substrate 1. It is featured in that the light-semitransmissive film 2 is made of the material containing silicon, the etching mask film 3 is made of the material containing chromium, the light shielding film 4 is made of a material containing chromium and oxygen, and a ratio of the etching rate of the light shielding film 4 to the etching rate of the etching mask film 3 in the dry etching with an oxygen-containing chlorine-based gas is not less than 3 and not more than 12.

公开(公告)号：US10527931B2

公开(公告)日：2020-01-07

申请号：US16125900

申请日：2018-09-10

申请人： HOYA CORPORATION

发明人： Osamu Nozawa ,  Ryo Ohkubo ,  Hiroaki Shishido ,  Yasushi Okubo

IPC分类号： G03F1/32 ,  G03F1/42 ,  G03F1/80 ,  C23C14/06 ,  C23C14/34 ,  G03F1/48 ,  G03F7/20

摘要： A mask blank is provided, by which an alignment mark can be formed between a transparent substrate and a laminated structure of a light semitransmissive film, etching stopper film, and light shielding film during manufacture of a transfer mask. The mask blank 100 comprises a structure in which the light semitransmissive film 2, etching stopper film 3, light shielding film 4, and etching mask film 5 are laminated in said order on the transparent substrate 1; the light semitransmissive film 2 and light shielding film 3 are made of a material which can be dry etched with a fluorine-based gas; the etching stopper film and etching mask film are made of a material containing chromium; and when a thickness of the etching stopper film is Ds, an etching rate of the etching stopper film with respect to an oxygen-containing chlorine-based gas is Vs, a thickness of the etching mask film is Dm, and an etching rate of the etching mask film with respect to the oxygen-containing chlorine-based gas is Vm, a relationship: (Dm/Vm)>(Ds/Vs) is satisfied.

公开(公告)号：US10101650B2

公开(公告)日：2018-10-16

申请号：US14910854

申请日：2014-09-05

申请人： HOYA CORPORATION

发明人： Osamu Nozawa ,  Ryo Ohkubo ,  Hiroaki Shishido ,  Yasushi Okubo

IPC分类号： G03F1/26 ,  G03F1/42 ,  G03F1/32 ,  G03F1/80 ,  C23C14/06 ,  C23C14/34 ,  G03F1/48 ,  G03F7/20

摘要： A mask blank is provided, by which an alignment mark can be formed between a transparent substrate and a laminated structure of a light semitransmissive film, etching stopper film, and light shielding film during manufacture of a transfer mask. The mask blank 100 comprises a structure in which the light semitransmissive film 2, etching stopper film 3, light shielding film 4, and etching mask film 5 are laminated in said order on the transparent substrate 1; the light semitransmissive film 2 and light shielding film 3 are made of a material which can be dry etched with a fluorine-based gas; the etching stopper film and etching mask film are made of a material containing chromium; and when a thickness of the etching stopper film is Ds, an etching rate of the etching stopper film with respect to an oxygen-containing chlorine-based gas is Vs, a thickness of the etching mask film is Dm, and an etching rate of the etching mask film with respect to the oxygen-containing chlorine-based gas is Vm, a relationship: (Dm/Vm)>(Ds/Vs) is satisfied.

公开(公告)号：US11333966B2

公开(公告)日：2022-05-17

申请号：US16755117

申请日：2018-11-20

申请人： HOYA CORPORATION

发明人： Osamu Nozawa ,  Yasutaka Horigome ,  Hitoshi Maeda

IPC分类号： G03F1/32

摘要： Provided is a mask blank including a phase shift film. The phase shift film is made of a material containing a non-metallic element and silicon and includes first, second, and third layers; refractive indexes n1, n2, and n3 of the first, second, and third layers, respectively, at the wavelength of an exposure light satisfy the relations of n1 n3; and extinction coefficients k1, k2, and k3 of the first, second, and third layers, respectively, at the wavelength of an exposure light satisfy the relation of k1>k2>k3.

公开(公告)号：US11226549B2

公开(公告)日：2022-01-18

申请号：US15754927

申请日：2016-06-20

申请人： HOYA CORPORATION

发明人： Osamu Nozawa ,  Hiroaki Shishido

IPC分类号： G03F1/26 ,  G03F1/48 ,  G03F1/80 ,  G03F1/84 ,  H01L21/027

摘要： Provided is a mask blank for a phase shift mask having an etching stopper film, which satisfies the characteristics: higher durability to dry etching with fluorine-based gas that is used during the shift pattern formation as compared to that of a transparent substrate; high resistance to chemical cleaning; and high transmittance of exposure light.
The mask blank includes a light shielding film on a main surface of a transparent substrate, having a structure where an etching stopper film, a phase shift film, and a light shielding film are laminated in this order on the transparent substrate; wherein the phase shift film includes a material containing silicon and oxygen; and the etching stopper film includes a material containing silicon, aluminum, and oxygen.

公开(公告)号：US11054735B2

公开(公告)日：2021-07-06

申请号：US16318216

申请日：2017-06-22

申请人： HOYA CORPORATION

发明人： Takenori Kajiwara ,  Ryo Ohkubo ,  Hiroaki Shishido ,  Osamu Nozawa

IPC分类号： G03F1/32 ,  G03F1/74 ,  G03F1/26 ,  G03F1/80 ,  H01L21/033

摘要： A mask blank having fast repair rate of EB defect repair and high repair rate ratio to EB defect repair relative to a transparent substrate that includes a phase shift film on a transparent substrate, the phase shift film has a structure including three sets or more of a set of a stacked structure including a high transmitting layer and a low transmitting layer, the high transmitting layer and the low transmitting layer are made of a material consisting of silicon and nitrogen, or a material consisting of silicon, nitrogen, oxygen, and one or more elements selected from a metalloid element and a non-metallic element, the high transmitting layer includes 50 atom % or more nitrogen content and has a thickness of 12 nm or less, and the low transmitting layer includes less than 50 atom % nitrogen content and has a thickness less than the high transmitting layer.

公开(公告)号：US10942441B2

公开(公告)日：2021-03-09

申请号：US16596008

申请日：2019-10-08

申请人： HOYA CORPORATION

发明人： Osamu Nozawa ,  Takenori Kajiwara ,  Hiroaki Shishido

IPC分类号： G03F1/32 ,  G03F1/54

摘要： A mask blank having a phase shift film and a light shielding film laminated on a transparent substrate. The phase shift film transmits ArF exposure light at a transmittance of from 2% to 30% and generates a phase difference of from 150° to 200°, is formed from a material containing Si and not substantially containing Cr, and has a lower layer (L) and an upper layer (U) laminated from the transparent substrate side. A refractive index n for layer L is below that of the substrate while n for layer U is higher, and layer L has an extinction coefficient k higher than that of layer U. The light shielding film includes a layer in contact with the phase shift film that is formed from a material containing Cr, has a n lower than that of layer U, and has an extinction coefficient k higher than that of layer U.

公开(公告)号：US10551733B2

公开(公告)日：2020-02-04

申请号：US15554335

申请日：2016-01-19

申请人： HOYA CORPORATION

发明人： Atsushi Kominato ,  Osamu Nozawa

IPC分类号： G03F1/32 ,  G03F7/20 ,  H01L21/027

摘要： A mask blank including a phase shift film is provided, wherein the phase shift film has a predetermined transmittance and a predetermined phase difference with respect to exposure light of an ArF excimer laser, and it is relatively easy to detect an etching end point for detecting a boundary between the phase shift film and a transparent substrate upon the EB defect repair.The phase shift film has a function to transmit the exposure light of the ArF excimer laser at a transmittance of not less than 10% and not more than 20%, and a function to generate a phase difference of not less than 150 degrees and not more than 190 degrees between the exposure light transmitted through the phase shift film and the exposure light transmitted through the air for the same distance as a thickness of the phase shift film. The phase shift film is made of a material containing a metal, silicon, nitrogen, and oxygen. A ratio of the metal content to the total content of the metal and silicon in the phase shift film is not less than 5% and not more than 10%, the oxygen content in the phase shift film is 10 atom % or more, and the silicon content in the phase shift film is three times or more the oxygen content.