Invention Application
US20140209563A1 ACHIEVING GREATER PLANARITY BETWEEN UPPER SURFACES OF A LAYER AND A CONDUCTIVE STRUCTURE RESIDING THEREIN 有权
实现层间上表面和导电结构之间的更大的平面化

  • Patent Title: ACHIEVING GREATER PLANARITY BETWEEN UPPER SURFACES OF A LAYER AND A CONDUCTIVE STRUCTURE RESIDING THEREIN
  • Patent Title (中): 实现层间上表面和导电结构之间的更大的平面化
  • Application No.: US13754170
    Application Date: 2013-01-30
  • Publication No.: US20140209563A1
    Publication Date: 2014-07-31
  • Inventor: Xunyuan ZHANGXiuyu CAI
  • Applicant: GLOBALFOUNDRIES, INC.
  • Applicant Address: KY Grand Cayman
  • Assignee: GLOBALFOUNDRIES, INC.
  • Current Assignee: GLOBALFOUNDRIES, INC.
  • Current Assignee Address: KY Grand Cayman
  • Main IPC: H05K3/00
  • IPC: H05K3/00
ACHIEVING GREATER PLANARITY BETWEEN UPPER SURFACES OF A LAYER AND A CONDUCTIVE STRUCTURE RESIDING THEREIN
Abstract:
Greater planarity is achieved between surfaces of a conductive structure and a layer within which the conductive structure resides. A portion of the conductive structure protruding above the surface of the layer is selectively oxidized, at least in part, to form an oxidized portion. The oxidized portion is then removed, at least partially, to facilitate achieving greater planarity. The protruding portions may optionally be formed by selectively disposing conductive material over the conductive structure, when that the conductive structure is initially recessed below the surface of the layer. A further embodiment includes selectively oxidizing a portion of the conductive structure below the surface of the layer, removing at least some of the oxidized portion so that an upper surface of the conductive structure is below the upper surface of the layer, and planarizing the upper surface of the layer to the upper surface of the conductive structure.
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