发明申请
- 专利标题： PATTERN FORMATION METHOD AND PATTERN FORMATION APPARATUS
- 专利标题（中）： 图案形成方法和图案形成装置
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申请号： US13953921申请日： 2013-07-30
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公开(公告)号： US20140213058A1公开(公告)日： 2014-07-31
- 发明人: Kentaro Matsunaga , Nobuhiro Komine , Eiji Yoneda
- 申请人： Kabushiki Kaisha Toshiba
- 申请人地址： JP Minato-ku
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Minato-ku
- 优先权： JP2013-014360 20130129
- 主分类号： H01L21/308
- IPC分类号： H01L21/308 ; H01L21/67
摘要：
According one embodiment, a pattern formation method forming a resist layer on a pattern formation surface by pressing a template provided with a concave-convex from above the resist layer to form a resist pattern on the pattern formation surface, includes: forming a resist layer in a first region having an area smaller than an area of the pattern formation surface and in a second region other than the first region of the pattern formation surface; pressing a template against the resist layer; irradiating the resist layer with light via the template to form a first resist layer in the first region, curing of the first resist layer being suppressed, and form the resist pattern including a second resist layer, curing of the second resist layer proceeds in the second region; and removing the first resist layer from the first region, the curing of the first resist layer being suppressed.
公开/授权文献
- US09260300B2 Pattern formation method and pattern formation apparatus 公开/授权日：2016-02-16
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