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公开(公告)号：US20140213058A1
公开(公告)日：2014-07-31
申请号：US13953921
申请日：2013-07-30
发明人： Kentaro Matsunaga , Nobuhiro Komine , Eiji Yoneda
IPC分类号： H01L21/308 , H01L21/67
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L21/0273
摘要： According one embodiment, a pattern formation method forming a resist layer on a pattern formation surface by pressing a template provided with a concave-convex from above the resist layer to form a resist pattern on the pattern formation surface, includes: forming a resist layer in a first region having an area smaller than an area of the pattern formation surface and in a second region other than the first region of the pattern formation surface; pressing a template against the resist layer; irradiating the resist layer with light via the template to form a first resist layer in the first region, curing of the first resist layer being suppressed, and form the resist pattern including a second resist layer, curing of the second resist layer proceeds in the second region; and removing the first resist layer from the first region, the curing of the first resist layer being suppressed.
摘要翻译： 根据一个实施例，通过从抗蚀剂层上方按压设置有凹凸的模板在图案形成表面上形成抗蚀剂图案，在图案形成表面上形成抗蚀剂层的图案形成方法包括：在 第一区域，其具有比图案形成表面的面积小的区域和除了图案形成表面的第一区域之外的第二区域; 将模板压在抗蚀剂层上; 通过模板照射抗蚀剂层以在第一区域中形成第一抗蚀剂层，抑制第一抗蚀剂层的固化，并形成包括第二抗蚀剂层的抗蚀剂图案，第二抗蚀剂层的固化在第二区域中进行 地区; 并且从第一区域去除第一抗蚀剂层，抑制第一抗蚀剂层的固化。
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公开(公告)号：US20170092656A1
公开(公告)日：2017-03-30
申请号：US15375321
申请日：2016-12-12
发明人： Satoshi NAGAI , Eiji Yoneda , Kentaro Matsunaga , Koutarou Sho
IPC分类号： H01L27/11582 , H01L21/768
CPC分类号： H01L27/11582 , H01L21/0273 , H01L21/0335 , H01L21/31144 , H01L21/76805 , H01L21/76816 , H01L21/76828 , H01L21/76831 , H01L21/76832 , H01L21/76895 , H01L27/11575
摘要： According to one embodiment, a semiconductor device includes a stacked body of N (N is an integer of 2 or more) layers stacked on a semiconductor substrate and openings different in depth surrounded by the stacked body and separated from each other.
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公开(公告)号：US20140377956A1
公开(公告)日：2014-12-25
申请号：US14100549
申请日：2013-12-09
发明人： Yumi NAKAJIMA , Kentaro Matsunaga
IPC分类号： H01L21/308
CPC分类号： H01L21/3086 , H01L21/0271 , H01L21/0337 , H01L21/3085
摘要： According to one embodiment, first, on a process object, a hydrophilic guide pattern including a first hole forming pattern having a first hole diameter and a second hole forming pattern having a second hole diameter is formed. Then, above the guide pattern, a frame pattern having a first opening region in a forming region of a plurality of the first hole forming patterns and a second opening region in a forming region of a plurality of the second hole forming patterns is formed. Then, a first solution including a first block copolymer having a hydrophilic polymer chain and a hydrophobic polymer chain is supplied to the first opening region to condense the first block copolymer. The hydrophilic polymer chain is then removed to reduce the diameter of the first hole forming pattern to a third hole diameter that is smaller than the first hole diameter.
摘要翻译： 根据一个实施例，首先，在加工对象物上，形成包括具有第一孔径的第一孔形成图案和具有第二孔径的第二孔形成图案的亲水性引导图案。 然后，在引导图案之上形成有在多个第一孔形成图案的形成区域中具有第一开口区域和在多个第二孔形成图案的形成区域中的第二开口区域的框架图案。 然后，将包含具有亲水性聚合物链和疏水性聚合物链的第一嵌段共聚物的第一溶液供给至第一开口部，使第一嵌段共聚物缩合。 然后去除亲水性聚合物链以将第一孔形成图案的直径减小到小于第一孔直径的第三孔直径。
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4.发明申请FUEL ELECTRODES FOR SOLID OXIDE ELECTROCHEMICAL CELL, PROCESSES FOR PRODUCING THE SAME, AND SOLID OXIDE ELECTROCHEMICAL CELLS 有权用于固体氧化物电化学细胞的燃料电极，其制备方法和固体氧化物电化学电池公开(公告)号：US20130196246A1
公开(公告)日：2013-08-01
申请号：US13804323
申请日：2013-03-14
发明人： Takayuki Fukasawa , Keizo Shimamura , Yoshio Hanakata , Masato Yoshino , Kentaro Matsunaga , Tsuneji Kameda , Yoshiyasu Itoh
CPC分类号： H01M4/9041 , H01M4/8621 , H01M4/881 , H01M4/8885 , H01M4/9025 , H01M4/9075 , H01M8/0202 , H01M8/0232 , H01M8/0245 , H01M8/1004 , H01M8/1016 , H01M8/1226 , H01M2008/1293 , Y02E60/521 , Y02E60/525 , Y02P70/56
摘要： A fuel electrode for a solid oxide electrochemical cell includes: an electrode layer constituted of a mixed phase including an oxide having mixed conductivity and another oxide selected from the group including an aluminum-based oxide and a magnesium-based composite oxide, said another oxide having, supported on a surface part thereof, particles of at least one member selected from nickel, cobalt, and nickel-cobalt alloys.
摘要翻译： 用于固体氧化物电化学电池的燃料电极包括：由包含具有混合导电性的氧化物和选自铝基氧化物和镁基复合氧化物的另一种氧化物的混合相构成的电极层，所述另一种氧化物具有 在其表面部分上支撑有选自镍，钴和镍 - 钴合金中的至少一种的颗粒。
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公开(公告)号：US08999600B2
公开(公告)日：2015-04-07
申请号：US13766879
申请日：2013-02-14
CPC分类号： C25B9/06 , C25B9/08 , H01M4/8657 , H01M4/9033 , H01M8/1213 , H01M8/1246 , H01M2300/0074 , H01M2300/0094 , Y02E60/521 , Y02E60/525 , Y02P70/56
摘要： A solid oxide electrochemical cell of an embodiment includes: a cathode; an anode; and an electrolyte layer interposed between the cathode and the anode, wherein a porous region exists in a layer form in a region with a depth of 50% or less of the electrolyte layer from an anode side surface toward the cathode in the electrolyte layer or between the electrolyte layer and the anode.
摘要翻译： 实施方案的固体氧化物电化学电池包括：阴极; 阳极; 以及插入在所述阴极和所述阳极之间的电解质层，其中多孔区域在所述电解质层中从所述电解质层的阳极侧表面朝向阴极的深度为50％以下的区域中以层的形式存在， 电解质层和阳极。
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公开(公告)号：US09465295B2
公开(公告)日：2016-10-11
申请号：US14193410
申请日：2014-02-28
发明人： Kentaro Matsunaga , Masashi Terao , Eiji Yoneda
IPC分类号： H01L21/033 , G03F7/20 , G03F7/00
CPC分类号： G03F7/2024 , G03F7/0002
摘要： According to one embodiment, first a guide pattern is formed above an object to processing, and then surface modification is performed on the guide pattern. Then a solution including a block copolymer is coated over the object to processing having the guide pattern formed thereon, and the block copolymer is made to phase separate over the object to processing. Subsequently, one component of the phase-separated block copolymer is removed by development. And with the guide pattern coated with other component of the block copolymer as a mask, the object to processing is patterned.
摘要翻译： 根据一个实施例，首先在物体上形成引导图案以进行处理，然后对引导图案进行表面修饰。 然后将包含嵌段共聚物的溶液涂覆在物体上，形成有引导图案的处理，并使嵌段共聚物在物体上相分离以进行处理。 随后，通过显影除去相分离的嵌段共聚物的一种组分。 并且，用嵌段共聚物的其他成分涂布的引导图案作为掩模，对加工对象进行图案化。
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公开(公告)号：US09335642B2
公开(公告)日：2016-05-10
申请号：US13771342
申请日：2013-02-20
发明人： Kentaro Matsunaga
IPC分类号： G03F7/20
CPC分类号： G03F7/70925
摘要： According to one embodiment, an EUV exposure apparatus includes a mirror which reflects an EUV light beam irradiated from a light source and a wafer stage which is irradiated with the EUV light beam reflected by the mirror. When exposure of a first wafer is to be performed, the first wafer is mounted on the wafer stage, and the wafer stage allows the first wafer to be irradiated with the EUV light beam. In addition, when cleaning of the mirror is to be performed, the EUV light beam is reflected by a reflection substrate, and the wafer stage allows the mirror to be irradiated with the reflected light beam.
摘要翻译： 根据一个实施例，EUV曝光装置包括反射从光源照射的EUV光束和被反射镜反射的EUV光束照射的晶片台的反射镜。 当要执行第一晶片的曝光时，第一晶片安装在晶片台上，并且晶片台允许第一晶片被EUV光束照射。 此外，当要执行反射镜的清洁时，EUV光束被反射基板反射，并且晶片台允许反射镜被反射的光束照射。
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公开(公告)号：US20160064216A1
公开(公告)日：2016-03-03
申请号：US14576435
申请日：2014-12-19
发明人： Sonoe NAKAOKA , Kentaro Matsunaga , Eiji Yoneda
IPC分类号： H01L21/02 , H01L21/311 , H01L21/027
CPC分类号： G03F7/38 , G03F1/0046 , G03F1/144 , G03F7/0002 , G03F7/004 , G03F7/2016 , G03F7/203 , H01L21/0271 , H01L21/0274
摘要： According to an embodiment, a guide pattern having a first opening pattern and a second opening pattern shallower than the first opening pattern, is formed on a film to be processed. A directed self-assembly material is set into the first and second opening patterns. The directed self-assembly material is phase-separated into first and second phases in the first and second opening patterns. A third opening pattern is formed by removing the first phase. The third opening pattern in the second opening pattern is eliminated, and the second and third opening patterns are transferred to the film to be processed, by one etching to be processed from the tops of the second and third opening patterns.
摘要翻译： 根据实施例，具有第一开口图案和比第一开口图案浅的第二开口图案的引导图案形成在待加工的薄膜上。 定向自组装材料被设置在第一和第二开口图案中。 定向自组装材料在第一和第二开口图案中相分离成第一和第二相。 通过去除第一相来形成第三开口图案。 消除第二开口图案中的第三开口图案，并且通过从第二和第三开口图案的顶部进行一次蚀刻将第二和第三开口图案转印到待加工薄膜。
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9.发明授权公开(公告)号：US09070559B2
公开(公告)日：2015-06-30
申请号：US14196239
申请日：2014-03-04
发明人： Seiro Miyoshi , Maki Miyazaki , Kentaro Matsunaga
IPC分类号： H01L21/44 , H01L21/033 , H01L21/28 , H01L21/308 , H01L21/3213 , H01L21/027 , H01L27/115
CPC分类号： H01L21/0337 , H01L21/0271 , H01L21/0338 , H01L21/28273 , H01L21/3086 , H01L21/32139 , H01L27/11524
摘要： According to one embodiment, first, a core pattern is formed above a hard mask layer that is formed above a process object. Then, a spacer film is formed above the hard mask layer. Next, the spacer film is etch-backed. Subsequently, an embedded layer is embedded between the core patterns whose peripheral areas are surrounded by the spacer film. Then, the core pattern and the embedded layer are removed simultaneously. Subsequently, using the spacer pattern as a mask, the hard mask layer and the process object are processed.
摘要翻译： 根据一个实施例，首先，在形成在加工对象上方的硬掩模层的上方形成芯图案。 然后，在硬掩模层的上方形成间隔膜。 接下来，间隔膜被蚀刻支撑。 随后，嵌入层被嵌入在其周边区域被间隔膜包围的芯图案之间。 然后，同时去除芯图案和嵌入层。 随后，使用间隔图案作为掩模，处理硬掩模层和处理对象。
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公开(公告)号：US09349585B2
公开(公告)日：2016-05-24
申请号：US14576435
申请日：2014-12-19
发明人： Sonoe Nakaoka , Kentaro Matsunaga , Eiji Yoneda
IPC分类号： G03F7/004 , H01L21/027 , H01L21/02 , H01L21/311 , G03F1/00 , G03F7/20 , G03F7/38
CPC分类号： G03F7/38 , G03F1/0046 , G03F1/144 , G03F7/0002 , G03F7/004 , G03F7/2016 , G03F7/203 , H01L21/0271 , H01L21/0274
摘要： According to an embodiment, a guide pattern having a first opening pattern and a second opening pattern shallower than the first opening pattern, is formed on a film to be processed. A directed self-assembly material is set into the first and second opening patterns. The directed self-assembly material is phase-separated into first and second phases in the first and second opening patterns. A third opening pattern is formed by removing the first phase. The third opening pattern in the second opening pattern is eliminated, and the second and third opening patterns are transferred to the film to be processed, by one etching to be processed from the tops of the second and third opening patterns.
摘要翻译： 根据实施例，具有第一开口图案和比第一开口图案浅的第二开口图案的引导图案形成在待加工的薄膜上。 定向自组装材料被设置在第一和第二开口图案中。 定向自组装材料在第一和第二开口图案中相分离成第一和第二相。 通过去除第一相来形成第三开口图案。 消除了第二开口图案中的第三开口图案，并且通过从第二和第三开口图案的顶部进行一次蚀刻将第二和第三开口图案转印到待加工薄膜。
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