发明申请
- 专利标题： BORON-DOPED CARBON-BASED HARDMASK ETCH PROCESSING
- 专利标题（中）： 基于碳纳米管的硬质合金加工
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申请号： US14168350申请日： 2014-01-30
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公开(公告)号： US20140213059A1公开(公告)日： 2014-07-31
- 发明人: Kenny Linh Doan , Jong Mun Kim , Daisuke Shimizu
- 申请人： Kenny Linh Doan , Jong Mun Kim , Daisuke Shimizu
- 主分类号： H01L21/033
- IPC分类号： H01L21/033
摘要：
Boron-doped carbon-based hardmask etch processing is described. In an example, a method of patterning a film includes etching a boron-doped amorphous carbon layer with a plasma based on a combination of CH4/N2/O2 and a flourine-rich source such as, but not limited to, CF4, SF6 or C2F6.
公开/授权文献
- US09129911B2 Boron-doped carbon-based hardmask etch processing 公开/授权日：2015-09-08
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