Invention Application
- Patent Title: SINGLE-CRYSTAL DIAMOND AND MANUFACTURING METHOD THEREOF
- Patent Title (中): 单晶金刚石及其制造方法
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Application No.: US14241855Application Date: 2012-08-30
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Publication No.: US20140219907A1Publication Date: 2014-08-07
- Inventor: Kazuhiro Ikeda , Hitoshi Sumiya
- Applicant: Kazuhiro Ikeda , Hitoshi Sumiya
- Applicant Address: JP Osaka-shi
- Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Current Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Current Assignee Address: JP Osaka-shi
- Priority: JP2011-191901 20110902; JP2012-071643 20120327
- International Application: PCT/JP2012/072042 WO 20120830
- Main IPC: C30B29/04
- IPC: C30B29/04 ; C30B7/10

Abstract:
Single-crystal diamond is composed of carbon in which a concentration of a carbon isotope 12C is not lower than 99.9 mass % and a plurality of inevitable impurities other than carbon. The inevitable impurities include nitrogen, boron, hydrogen, and nickel, and a total content of nitrogen, boron, and hydrogen of the plurality of inevitable impurities is not higher than 0.01 mass %. In order to manufacture single-crystal diamond, initially, a hydrocarbon gas in which a concentration of the carbon isotope 12C is not lower than 99.9 mass % is subjected to denitrification.
Public/Granted literature
- US09725826B2 Single-crystal diamond and manufacturing method thereof Public/Granted day:2017-08-08
Information query
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