发明申请
- 专利标题: SINGLE-CRYSTAL DIAMOND AND MANUFACTURING METHOD THEREOF
- 专利标题(中): 单晶金刚石及其制造方法
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申请号: US14241855申请日: 2012-08-30
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公开(公告)号: US20140219907A1公开(公告)日: 2014-08-07
- 发明人: Kazuhiro Ikeda , Hitoshi Sumiya
- 申请人: Kazuhiro Ikeda , Hitoshi Sumiya
- 申请人地址: JP Osaka-shi
- 专利权人: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人地址: JP Osaka-shi
- 优先权: JP2011-191901 20110902; JP2012-071643 20120327
- 国际申请: PCT/JP2012/072042 WO 20120830
- 主分类号: C30B29/04
- IPC分类号: C30B29/04 ; C30B7/10
摘要:
Single-crystal diamond is composed of carbon in which a concentration of a carbon isotope 12C is not lower than 99.9 mass % and a plurality of inevitable impurities other than carbon. The inevitable impurities include nitrogen, boron, hydrogen, and nickel, and a total content of nitrogen, boron, and hydrogen of the plurality of inevitable impurities is not higher than 0.01 mass %. In order to manufacture single-crystal diamond, initially, a hydrocarbon gas in which a concentration of the carbon isotope 12C is not lower than 99.9 mass % is subjected to denitrification.
公开/授权文献
- US09725826B2 Single-crystal diamond and manufacturing method thereof 公开/授权日:2017-08-08
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