发明申请
- 专利标题: PLASMA PROCESSING APPARATUS
- 专利标题(中): 等离子体加工设备
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申请号: US14233669申请日: 2013-06-20
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公开(公告)号: US20140238301A1公开(公告)日: 2014-08-28
- 发明人: Shinya Akano
- 申请人: CHUGAI RO CO., LTD.
- 申请人地址: JP Osaka-shi, Osaka
- 专利权人: CHUGAI RO CO., LTD.
- 当前专利权人: CHUGAI RO CO., LTD.
- 当前专利权人地址: JP Osaka-shi, Osaka
- 优先权: JP2012-180141 20120815
- 国际申请: PCT/JP2013/066976 WO 20130620
- 主分类号: H01J37/32
- IPC分类号: H01J37/32
摘要:
The present invention provides a plasma processing apparatus capable of bringing plasma close to a processing target and separating the plasma from the processing target. The plasma processing apparatus 1 according to the present invention has a chamber internally having a holding space 2a in which a processing target object 5 is held, and a plasma space 2b in which plasma is to be formed, a plasma gun 3 for emitting electrons into the plasma space 2b to form the plasma, and at least one pair of position-adjustable opposed magnets 4 for forming a magnetic flux passing across the chamber 2, between the holding space 2a and the plasma space 2b.
公开/授权文献
- US08986458B2 Plasma processing apparatus 公开/授权日:2015-03-24
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