Invention Application
- Patent Title: CONTROLLED AIR GAP FORMATION
- Patent Title (中): 控制空气隙形成
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Application No.: US13834508Application Date: 2013-03-15
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Publication No.: US20140248754A1Publication Date: 2014-09-04
- Inventor: Kiran V. Thadani , Jingjing Xu , Abhijit Basu Mallick , Joe Griffith Cruz , Nitin K. Ingle , Pravin K. Narwankar
- Applicant: APPLIED MATERIALS INC.
- Main IPC: H01L21/20
- IPC: H01L21/20

Abstract:
A method of forming and controlling air gaps between adjacent raised features on a substrate includes forming a silicon-containing film in a bottom region between the adjacent raised features using a flowable deposition process. The method also includes forming carbon-containing material on top of the silicon-containing film and forming a second film over the carbon-containing material using a flowable deposition process. The second film fills an upper region between the adjacent raised features. The method also includes curing the materials at an elevated temperature for a period of time to form the air gaps between the adjacent raised features. The thickness and number layers of films can be used to control the thickness, vertical position and number of air gaps.
Public/Granted literature
- US08921235B2 Controlled air gap formation Public/Granted day:2014-12-30
Information query
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