公开(公告)号：US20170040180A1

公开(公告)日：2017-02-09

申请号：US14818165

申请日：2015-08-04

Applicant: Applied Materials, Inc.

Inventor： Jingjing Xu ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  H01J37/32357

Abstract: A method of etching silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch using anhydrous vapor-phase HF. The HF is combined with an additional precursor in the substrate processing region. The HF may enter through one channel(s) and the additional precursor may flow through another channel(s) prior to forming the combination. The combination may be formed near the substrate. The silicon oxide etch selectivity relative to silicon nitride from is selectable from about one to several hundred. In all cases, the etch rate of exposed silicon, if present, is negligible. No precursors are excited in any plasma either outside or inside the substrate processing region according to embodiments. The additional precursor may be a nitrogen-and-hydrogen-containing precursor such as ammonia.

Abstract translation: 描述了在图案化的异质结构上蚀刻氧化硅的方法，并且包括使用无水气相HF的气相蚀刻。 HF与衬底处理区域中的另外的前体结合。 在形成组合之前，HF可以通过一个通道进入，另外的前体可以流过另一个通道。 可以在衬底附近形成组合。 相对于氮化硅的氧化硅蚀刻选择性可以从大约一百到几百个来选择。 在所有情况下，暴露的硅的蚀刻速率（如果存在）是可忽略的。 根据实施例，在衬底处理区域的外部或内部，在任何等离子体中都不会激发前体。 另外的前体可以是含氮和氢的前体，例如氨。

公开(公告)号：US20160307771A1

公开(公告)日：2016-10-20

申请号：US14690165

申请日：2015-04-17

Applicant: Applied Materials, Inc.

Inventor： Jingjing Xu ,  Fei Wang ,  Anchuan Wang ,  Nitin K. Ingle ,  Robert Jan Visser

IPC: H01L21/311

CPC classification number: H01L21/31116

Abstract: A method of etching silicon nitride on patterned heterogeneous structures is described and includes a gas phase etch using anhydrous vapor-phase HF. The HF may be combined with one or more of several precursors in the substrate processing region and near the substrate to increase the silicon nitride etch rate and/or the silicon nitride selectivity. The silicon nitride etch selectivity is increased most notably when compared with silicon of various forms. No precursors are excited in any plasma either outside or inside the substrate processing region according to embodiments. The HF may be flowed through one set of channels in a dual-channel showerhead while the other precursor is flowed through a second set of channels in the dual-channel showerhead.

Abstract translation: 描述了在图案化异质结构上蚀刻氮化硅的方法，并且包括使用无水气相HF的气相蚀刻。 HF可以与衬底处理区域和衬底附近的几种前体中的一种或多种组合以增加氮化硅蚀刻速率和/或氮化硅选择性。 当与各种形式的硅相比时，氮化硅蚀刻选择性最显着地增加。 根据实施例，在衬底处理区域的外部或内部，在任何等离子体中都不会激发前体。 HF可以在双通道喷头中流过一组通道，而另一个前体流经双通道喷头中的第二组通道。

公开(公告)号：US20150162214A1

公开(公告)日：2015-06-11

申请号：US14560525

申请日：2014-12-04

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Huixiong Dai ,  Patrick M. Martin ,  Timothy Michaelson ,  Kadthala R. Narendrnath ,  Robert Jan Visser ,  Jingjing Xu ,  Lin Zhang

IPC: H01L21/3213 ,  H01L21/3205

CPC classification number: H01L21/32051 ,  C23C16/04 ,  C23C16/18 ,  C23C16/45551 ,  C23C16/45553 ,  H01L21/28562 ,  H01L21/76849

Abstract: Provided are methods for selective deposition. Certain methods describe providing a first substrate surface; providing a second substrate surface; depositing a first layer of film over the first and second substrate surfaces, wherein the deposition has an incubation delay over the second substrate surface such that the first layer of film over the first substrate surface is thicker than the first layer of film deposited over the second substrate surface; and etching the first layer of film over the first and second substrate surfaces, wherein the first layer of film over the second substrate surface is at least substantially removed, but the first layer of film over the first substrate is only partially removed.

Abstract translation: 提供了选择性沉积的方法。 某些方法描述了提供第一衬底表面; 提供第二衬底表面; 在所述第一和第二衬底表面上沉积第一层膜，其中所述沉积在所述第二衬底表面上具有孵育延迟，使得所述第一衬底表面上的所述第一层膜比沉积在所述第二衬底表面上的所述第一层膜厚 基材表面; 并且在所述第一和第二衬底表面上蚀刻所述第一层膜，其中所述第二衬底表面上的所述第一层膜至少被基本上去除，但所述第一衬底上的所述第一层膜仅被部分地去除。

公开(公告)号：US09716012B2

公开(公告)日：2017-07-25

申请号：US14560525

申请日：2014-12-04

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Huixiong Dai ,  Patrick M. Martin ,  Timothy Michaelson ,  Kadthala R. Narendrnath ,  Robert Jan Visser ,  Jingjing Xu ,  Lin Zhang

IPC: H01L21/3205 ,  C23C16/04 ,  C23C16/18 ,  C23C16/455 ,  H01L21/285 ,  H01L21/768

CPC classification number: H01L21/32051 ,  C23C16/04 ,  C23C16/18 ,  C23C16/45551 ,  C23C16/45553 ,  H01L21/28562 ,  H01L21/76849

Abstract: Provided are methods for selective deposition. Certain methods describe providing a first substrate surface; providing a second substrate surface; depositing a first layer of film over the first and second substrate surfaces, wherein the deposition has an incubation delay over the second substrate surface such that the first layer of film over the first substrate surface is thicker than the first layer of film deposited over the second substrate surface; and etching the first layer of film over the first and second substrate surfaces, wherein the first layer of film over the second substrate surface is at least substantially removed, but the first layer of film over the first substrate is only partially removed.

公开(公告)号：US09236265B2

公开(公告)日：2016-01-12

申请号：US14270060

申请日：2014-05-05

Applicant: Applied Materials, Inc.

Inventor： Mikhail Korolik ,  Nitin K. Ingle ,  Anchuan Wang ,  Jingjing Xu

IPC: H01L21/3065 ,  H01L29/161 ,  H01L29/165

CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01J37/32724 ,  H01L29/161 ,  H01L29/165

Abstract: Methods of selectively etching silicon germanium relative to silicon are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the silicon germanium. The plasmas effluents react with exposed surfaces and selectively remove silicon germanium while very slowly removing other exposed materials. Generally speaking, the methods are useful for removing Si(1-X)GeX (including germanium i.e. X=1) faster than Si(1-Y)GeY, for all X>Y. In some embodiments, the silicon germanium etch selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region.

Abstract translation: 描述了相对于硅选择性地蚀刻硅锗的方法。 这些方法包括使用由含氟前体形成的等离子体流出物的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与硅锗反应。 等离子体流出物与暴露的表面反应并选择性地去除硅锗，同时非常缓慢地除去其它暴露的材料。 一般来说，对于所有的X> Y，这些方法可用于比Si（1-Y）GeY更快地除去Si（1-X）GeX（包括锗，即X = 1）。 在一些实施例中，硅锗蚀刻选择性部分地来自位于远程等离子体和基板处理区域之间的离子抑制元件的存在。

公开(公告)号：US20150275364A1

公开(公告)日：2015-10-01

申请号：US14666689

申请日：2015-03-24

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Huixiong Dai ,  Patrick M. Martin ,  Timothy Michaelson ,  Kadthala R. Narendrnath ,  Robert Jan Visser ,  Jingjing Xu ,  Lin Zhang

IPC: C23C16/455 ,  C23C16/50 ,  C23C16/458

CPC classification number: C23C16/45544 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/4584 ,  C23C16/56 ,  H01L21/68764 ,  H01L21/68771

Abstract: Provided are apparatus and methods for the sequential deposition and annealing of a film within a single processing chamber. An energy source positioned within the processing chamber in an area isolated from process gases can be used to rapidly form and decompose a film on the substrate without damaging underlying layers due to exceeding the thermal budget of the device being formed.

Abstract translation: 提供了用于在单个处理室内顺序沉积和退火膜的装置和方法。 位于与处理气体隔离的区域内的处理室内的能量源可用于快速地形成和分解衬底上的膜，而不会由于超过正在形成的器件的热量预算而损坏下层。

公开(公告)号：US09576815B2

公开(公告)日：2017-02-21

申请号：US14690165

申请日：2015-04-17

Applicant: Applied Materials, Inc.

Inventor： Jingjing Xu ,  Fei Wang ,  Anchuan Wang ,  Nitin K. Ingle ,  Robert Jan Visser

IPC: H01L21/302 ,  H01L21/311

CPC classification number: H01L21/31116

Abstract: A method of etching silicon nitride on patterned heterogeneous structures is described and includes a gas phase etch using anhydrous vapor-phase HF. The HF may be combined with one or more of several precursors in the substrate processing region and near the substrate to increase the silicon nitride etch rate and/or the silicon nitride selectivity. The silicon nitride etch selectivity is increased most notably when compared with silicon of various forms. No precursors are excited in any plasma either outside or inside the substrate processing region according to embodiments. The HF may be flowed through one set of channels in a dual-channel showerhead while the other precursor is flowed through a second set of channels in the dual-channel showerhead.

Abstract translation: 描述了在图案化异质结构上蚀刻氮化硅的方法，并且包括使用无水气相HF的气相蚀刻。 HF可以与衬底处理区域和衬底附近的几种前体中的一种或多种组合以增加氮化硅蚀刻速率和/或氮化硅选择性。 当与各种形式的硅相比时，氮化硅蚀刻选择性最显着地增加。 根据实施例，在衬底处理区域的外部或内部，在任何等离子体中都不会激发前体。 HF可以在双通道喷头中流过一组通道，而另一个前体流经双通道喷头中的第二组通道。

公开(公告)号：US09564341B1

公开(公告)日：2017-02-07

申请号：US14818165

申请日：2015-08-04

Applicant: Applied Materials, Inc.

Inventor： Jingjing Xu ,  Anchuan Wang ,  Nitin K. Ingle

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/311

CPC classification number: H01L21/31116 ,  H01J37/32357

Abstract: A method of etching silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch using anhydrous vapor-phase HF. The HF is combined with an additional precursor in the substrate processing region. The HF may enter through one channel(s) and the additional precursor may flow through another channel(s) prior to forming the combination. The combination may be formed near the substrate. The silicon oxide etch selectivity relative to silicon nitride from is selectable from about one to several hundred. In all cases, the etch rate of exposed silicon, if present, is negligible. No precursors are excited in any plasma either outside or inside the substrate processing region according to embodiments. The additional precursor may be a nitrogen-and-hydrogen-containing precursor such as ammonia.

Abstract translation: 描述了在图案化的异质结构上蚀刻氧化硅的方法，并且包括使用无水气相HF的气相蚀刻。 HF与衬底处理区域中的另外的前体结合。 在形成组合之前，HF可以通过一个通道进入，另外的前体可以流过另一个通道。 可以在衬底附近形成组合。 相对于氮化硅的氧化硅蚀刻选择性可以从大约一百到几百个来选择。 在所有情况下，暴露的硅的蚀刻速率（如果存在）是可忽略的。 根据实施例，在衬底处理区域的外部或内部，在任何等离子体中都不会激发前体。 另外的前体可以是含氮和氢的前体，例如氨。

公开(公告)号：US08921235B2

公开(公告)日：2014-12-30

申请号：US13834508

申请日：2013-03-15

Applicant: Applied Materials Inc.

Inventor： Kiran V. Thadani ,  Jingjing Xu ,  Abhijit Basu Mallick ,  Joe Griffith Cruz ,  Nitin K. Ingle ,  Pravin K. Narwankar

IPC: H01L21/00 ,  H01L21/20

CPC classification number: H01L21/2015 ,  C23C16/045 ,  C23C16/26 ,  C23C16/30 ,  C23C16/56 ,  H01J37/32357 ,  H01L21/02115 ,  H01L21/02126 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/3105 ,  H01L21/764 ,  H01L21/7682 ,  H01L21/76837 ,  H01L2221/1047

Abstract: A method of forming and controlling air gaps between adjacent raised features on a substrate includes forming a silicon-containing film in a bottom region between the adjacent raised features using a flowable deposition process. The method also includes forming carbon-containing material on top of the silicon-containing film and forming a second film over the carbon-containing material using a flowable deposition process. The second film fills an upper region between the adjacent raised features. The method also includes curing the materials at an elevated temperature for a period of time to form the air gaps between the adjacent raised features. The thickness and number layers of films can be used to control the thickness, vertical position and number of air gaps.

Abstract translation: 在衬底上形成和控制相邻凸起特征之间的空气间隙的方法包括：使用可流动沉积工艺在邻近凸起特征之间的底部区域中形成含硅膜。 该方法还包括在含硅膜的顶部上形成含碳材料，并使用可流动的沉积工艺在含碳材料上形成第二膜。 第二膜填充相邻凸起特征之间的上部区域。 该方法还包括在升高的温度下固化材料一段时间以形成相邻凸起特征之间的气隙。 膜的厚度和数量层可用于控制厚度，垂直位置和气隙数量。

公开(公告)号：US20150126040A1

公开(公告)日：2015-05-07

申请号：US14270060

申请日：2014-05-05

Applicant: Applied Materials, Inc.

Inventor： Mikhail Korolik ,  Nitin K. Ingle ,  Anchuan Wang ,  Jingjing Xu

IPC: H01L21/3065 ,  H01L29/161

CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01J37/32724 ,  H01L29/161 ,  H01L29/165

Abstract: Methods of selectively etching silicon germanium relative to silicon are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the silicon germanium. The plasmas effluents react with exposed surfaces and selectively remove silicon germanium while very slowly removing other exposed materials. Generally speaking, the methods are useful for removing Si(1-X)GeX (including germanium i.e. X=1) faster than Si(1-Y)GeY, for all X>Y. In some embodiments, the silicon germanium etch selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region.

Abstract translation: 描述了相对于硅选择性地蚀刻硅锗的方法。 这些方法包括使用由含氟前体形成的等离子体流出物的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与硅锗反应。 等离子体流出物与暴露的表面反应并选择性地去除硅锗，同时非常缓慢地除去其它暴露的材料。 一般来说，对于所有的X> Y，这些方法可用于比Si（1-Y）GeY更快地除去Si（1-X）GeX（包括锗，即X = 1）。 在一些实施例中，硅锗蚀刻选择性部分地来自位于远程等离子体和基板处理区域之间的离子抑制元件的存在。