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发明申请
US20140252519A1 MAGNETORESISTIVE STRUCTURES, MAGNETIC RANDOM-ACCESS MEMORY DEVICES INCLUDING THE SAME AND METHODS OF MANUFACTURING THE MAGNETORESISTIVE STRUCTURE 有权
磁体结构，包括其的磁性随机存取存储器件及制造磁阻结构的方法

MAGNETORESISTIVE STRUCTURES, MAGNETIC RANDOM-ACCESS MEMORY DEVICES INCLUDING THE SAME AND METHODS OF MANUFACTURING THE MAGNETORESISTIVE STRUCTURE
摘要：
Magnetoresistive structures, magnetic random-access memory devices including the same, and methods of manufacturing the magnetoresistive structure, include a first magnetic layer having a magnetization direction that is fixed, a second magnetic layer corresponding to the first magnetic layer, wherein a magnetization direction of the second magnetic layer is changeable, and a magnetoresistance (MR) enhancing layer and an intermediate layer both between the first magnetic layer and the second magnetic layer.
摘要（中）：

磁阻结构，包括该磁阻结构的磁性随机存取存储器以及制造磁阻结构的方法包括具有固定的磁化方向的第一磁性层，与第一磁性层对应的第二磁性层， 第二磁性层是可变的，以及在第一磁性层和第二磁性层之间的磁阻（MR）增强层和中间层。

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