发明申请
- 专利标题： MAGNETORESISTIVE STRUCTURES, MAGNETIC RANDOM-ACCESS MEMORY DEVICES INCLUDING THE SAME AND METHODS OF MANUFACTURING THE MAGNETORESISTIVE STRUCTURE
- 专利标题（中）： 磁体结构，包括其的磁性随机存取存储器件及制造磁阻结构的方法
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申请号： US14167553申请日： 2014-01-29
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公开(公告)号： US20140252519A1公开(公告)日： 2014-09-11
- 发明人: Kee-won KIM , Kwang-seok KIM , Sung-chul LEE , Young-man JANG , Ung-hwan PI
- 申请人： Kee-won KIM , Kwang-seok KIM , Sung-chul LEE , Young-man JANG , Ung-hwan PI
- 优先权： KR10-2013-0025745 20130311
- 主分类号： H01L43/02
- IPC分类号： H01L43/02 ; H01L27/22
摘要：
Magnetoresistive structures, magnetic random-access memory devices including the same, and methods of manufacturing the magnetoresistive structure, include a first magnetic layer having a magnetization direction that is fixed, a second magnetic layer corresponding to the first magnetic layer, wherein a magnetization direction of the second magnetic layer is changeable, and a magnetoresistance (MR) enhancing layer and an intermediate layer both between the first magnetic layer and the second magnetic layer.