发明申请
- 专利标题: Methods of Plasma Surface Treatment in a PVD Chamber
- 专利标题(中): PVD室中等离子体表面处理方法
-
申请号: US13804265申请日: 2013-03-14
-
公开(公告)号: US20140262749A1公开(公告)日: 2014-09-18
- 发明人: Ashish Bodke , Olov Karlsson , Kevin Kashefi , Chi-I Lang , Dipankar Pramanik , Hong Sheng Yang , Xuena Zhang
- 申请人: Intermolecular, Inc.
- 申请人地址: US CA San Jose
- 专利权人: INTERMOLECULAR, INC.
- 当前专利权人: INTERMOLECULAR, INC.
- 当前专利权人地址: US CA San Jose
- 主分类号: C23C14/35
- IPC分类号: C23C14/35
摘要:
Combinatorial processing of a substrate comprising site-isolated sputter deposition and site-isolated plasma processing can be performed in a same process chamber. The process chamber, configured to perform sputter deposition and plasma processing, comprises a grounded shield having at least an aperture disposed above the substrate to form a small, dark space gap to reduce or eliminate any plasma formation within the gap. The plasma processing may include plasma etching or plasma surface treatment.
信息查询
IPC分类: