发明申请
US20140262749A1 Methods of Plasma Surface Treatment in a PVD Chamber 审中-公开
PVD室中等离子体表面处理方法

Methods of Plasma Surface Treatment in a PVD Chamber
摘要:
Combinatorial processing of a substrate comprising site-isolated sputter deposition and site-isolated plasma processing can be performed in a same process chamber. The process chamber, configured to perform sputter deposition and plasma processing, comprises a grounded shield having at least an aperture disposed above the substrate to form a small, dark space gap to reduce or eliminate any plasma formation within the gap. The plasma processing may include plasma etching or plasma surface treatment.
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