Invention Application
US20140268309A1 SUPPRESSION OF AMPLIFIED SPONTANEOUS EMISSION (ASE) WITHIN LASER PLANAR WAVEGUIDE DEVICES 有权
在激光平面波导装置中抑制放大的自发放电(ASE)

  • Patent Title: SUPPRESSION OF AMPLIFIED SPONTANEOUS EMISSION (ASE) WITHIN LASER PLANAR WAVEGUIDE DEVICES
  • Patent Title (中): 在激光平面波导装置中抑制放大的自发放电(ASE)
  • Application No.: US13796309
    Application Date: 2013-03-12
  • Publication No.: US20140268309A1
    Publication Date: 2014-09-18
  • Inventor: Friedrich Strohkendl
  • Applicant: RAYTHEON COMPANY
  • Main IPC: H01S3/063
  • IPC: H01S3/063 G02B6/02
SUPPRESSION OF AMPLIFIED SPONTANEOUS EMISSION (ASE) WITHIN LASER PLANAR WAVEGUIDE DEVICES
Abstract:
Described herein are devices and techniques for suppressing parasitic modes in planar waveguide amplifier structures. One or more of the side and end facets of a planar waveguide amplifier are angled with respect to a fast axis defined in a transverse plane perpendicular to a core region. A relationship between glancing in-plane angles of incidence and threshold bevel angles θT can be used to select side bevel angles θS to suppress parasitics by redirecting amplified spontaneous emission (ASE) from the core. It is possible to select the one or more bevel angles θS to be great enough to substantially redirect all but ballistic photons of any guided modes, effectively narrowing a numerical aperture of the planar waveguide amplifier along a slow axis, defined in a transverse plane perpendicular to the fast axis. Beneficially, such improvements can be realized for three part waveguide structures (e.g., cladding-core-cladding), with substantially smooth edge facets.
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