公开(公告)号：US09030732B2

公开(公告)日：2015-05-12

申请号：US13796309

申请日：2013-03-12

Applicant: Raytheon Company

Inventor： Friedrich Strohkendl

IPC: H01S3/06 ,  H01S3/063 ,  G02B6/10 ,  H01S3/16 ,  H01S5/028 ,  H01S5/50

CPC classification number: H01S3/0606 ,  G02B6/10 ,  H01S3/0612 ,  H01S3/0615 ,  H01S3/0625 ,  H01S3/063 ,  H01S3/0632 ,  H01S3/1608 ,  H01S3/161 ,  H01S3/1611 ,  H01S3/1616 ,  H01S3/1618 ,  H01S3/1623 ,  H01S3/1643 ,  H01S3/1698 ,  H01S3/2308 ,  H01S5/028 ,  H01S5/50 ,  H01S2301/02

Abstract: Described herein are devices and techniques for suppressing parasitic modes in planar waveguide amplifier structures. One or more of the side and end facets of a planar waveguide amplifier are angled with respect to a fast axis defined in a transverse plane perpendicular to a core region. A relationship between glancing in-plane angles of incidence and threshold bevel angles θT can be used to select side bevel angles θS to suppress parasitics by redirecting amplified spontaneous emission (ASE) from the core. It is possible to select the one or more bevel angles θS to be great enough to substantially redirect all but ballistic photons of any guided modes, effectively narrowing a numerical aperture of the planar waveguide amplifier along a slow axis, defined in a transverse plane perpendicular to the fast axis. Beneficially, such improvements can be realized for three part waveguide structures (e.g., cladding-core-cladding), with substantially smooth edge facets.

Abstract translation: 这里描述了用于抑制平面波导放大器结构中的寄生模式的装置和技术。 平面波导放大器的一个或多个侧面和端面相对于垂直于芯部区域的横向平面中限定的快轴成角度。 扫描面内入射角和阈值斜角角度之间的关系; T可用于选择侧斜角和角度; S通过将放大的自发发射（ASE）从核心重定向来抑制寄生效应。 可以选择一个或多个斜角和角度; S足够大以重新定向任何导向模式的所有弹道光子，有效地使平面波导放大器的数值孔径沿着横向平面中限定的慢轴变窄 垂直于快轴。 有利的是，可以实现具有基本平滑的边缘面的三部分波导结构（例如，包层芯包层）的这种改进。

公开(公告)号：US11133639B2

公开(公告)日：2021-09-28

申请号：US16043429

申请日：2018-07-24

Applicant: Raytheon Company

Inventor： Friedrich Strohkendl ,  Makan Mohageg ,  Michael Ushinsky

IPC: H01S3/0941 ,  G02B6/02 ,  H01S3/042 ,  H01S3/08

Abstract: Systems and methods described herein provide a thermally compensated waveguide structure having a thermal index profile configured to correct thermal aberrations caused by temperature gradients in a fast axis direction and/or correct other forms of distortions in an output beam generated by the waveguide structure. The waveguide structure includes a core region, one or more cladding, and one or more heat sinks. A geometry of these portions with respect to each other can provide a cold refractive index profile such that a cold refractive index value of a portion of the core region is less than a cold refractive index value of at least one of the one or more cladding regions. Responsive to thermal compensation, the cold refractive index profile is modified, through addition of a thermal index profile, to form a hot index profile having attributes including good overlap of the fundamental mode with the gain profile and mode clean-up through gain discrimination against higher order modes.

公开(公告)号：US20200036153A1

公开(公告)日：2020-01-30

申请号：US16043429

申请日：2018-07-24

Applicant: Raytheon Company

Inventor： Friedrich Strohkendl ,  Makan Mohageg ,  Michael Ushinsky

IPC: H01S3/0941 ,  H01S3/08 ,  H01S3/042 ,  G02B6/02

Abstract: Systems and methods described herein provide a thermally compensated waveguide structure having a thermal index profile configured to correct thermal aberrations caused by temperature gradients in a fast axis direction and/or correct other forms of distortions in an output beam generated by the waveguide structure. The waveguide structure includes a core region, one or more cladding, and one or more heat sinks. A geometry of these portions with respect to each other can provide a cold refractive index profile such that a cold refractive index value of a portion of the core region is less than a cold refractive index value of at least one of the one or more cladding regions. Responsive to thermal compensation, the cold refractive index profile is modified, through addition of a thermal index profile, to form a hot index profile having attributes including good overlap of the fundamental mode with the gain profile and mode clean-up through gain discrimination against higher order modes.

公开(公告)号：US20140268309A1

公开(公告)日：2014-09-18

申请号：US13796309

申请日：2013-03-12

Applicant: RAYTHEON COMPANY

Inventor： Friedrich Strohkendl

IPC: H01S3/063 ,  G02B6/02

CPC classification number: H01S3/0606 ,  G02B6/10 ,  H01S3/0612 ,  H01S3/0615 ,  H01S3/0625 ,  H01S3/063 ,  H01S3/0632 ,  H01S3/1608 ,  H01S3/161 ,  H01S3/1611 ,  H01S3/1616 ,  H01S3/1618 ,  H01S3/1623 ,  H01S3/1643 ,  H01S3/1698 ,  H01S3/2308 ,  H01S5/028 ,  H01S5/50 ,  H01S2301/02

Abstract: Described herein are devices and techniques for suppressing parasitic modes in planar waveguide amplifier structures. One or more of the side and end facets of a planar waveguide amplifier are angled with respect to a fast axis defined in a transverse plane perpendicular to a core region. A relationship between glancing in-plane angles of incidence and threshold bevel angles θT can be used to select side bevel angles θS to suppress parasitics by redirecting amplified spontaneous emission (ASE) from the core. It is possible to select the one or more bevel angles θS to be great enough to substantially redirect all but ballistic photons of any guided modes, effectively narrowing a numerical aperture of the planar waveguide amplifier along a slow axis, defined in a transverse plane perpendicular to the fast axis. Beneficially, such improvements can be realized for three part waveguide structures (e.g., cladding-core-cladding), with substantially smooth edge facets.

Abstract translation: 这里描述了用于抑制平面波导放大器结构中的寄生模式的装置和技术。 平面波导放大器的一个或多个侧面和端面相对于垂直于芯部区域的横向平面中限定的快轴成角度。 扫描面内入射角和阈值斜角角度之间的关系; T可用于选择侧斜角和角度; S通过将放大的自发发射（ASE）从核心重定向来抑制寄生效应。 可以选择一个或多个斜角和角度; S足够大以重新定向任何导向模式的所有弹道光子，有效地使平面波导放大器的数值孔径沿着横向平面中限定的慢轴变窄 垂直于快轴。 有利的是，可以实现具有基本平滑的边缘面的三部分波导结构（例如，包层芯包层）的这种改进。