发明申请
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件
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申请号： US14355737申请日： 2012-09-24
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公开(公告)号： US20140299891A1公开(公告)日： 2014-10-09
- 发明人: Shiro Hino , Naruhisa Miura , Akihiko Furukawa , Tomokatsu Watanabe , Kenichi Ohtsuka , Hiroshi Watanabe , Yuji Ebiike
- 申请人： Shiro Hino , Naruhisa Miura , Akihiko Furukawa , Tomokatsu Watanabe , Kenichi Ohtsuka , Hiroshi Watanabe , Yuji Ebiike
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Electric Corporation
- 当前专利权人： Mitsubishi Electric Corporation
- 当前专利权人地址： JP Tokyo
- 优先权： JP2011-263331 20111201
- 国际申请： PCT/JP2012/074340 WO 20120924
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L29/10 ; H01L29/16
摘要：
A semiconductor device that can improve reliability while suppressing increase of a conduction loss or a switching loss. In the semiconductor device, when a two-dimensional shape on a main surface of the semiconductor substrate is an unit cell, the shape being a repeating unit of a plurality of well regions periodically disposed in a surface layer of a drift layer, one unit cell and another unit cell adjacent in an x-axis direction are disposed misaligned in a y-axis direction, and one unit cell and another unit cell adjacent in the y-axis direction are disposed misaligned in the x-axis direction.
公开/授权文献
- US09190468B2 Semiconductor device 公开/授权日：2015-11-17
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