Invention Application
- Patent Title: CASCODED SEMICONDUCTOR DEVICES
- Patent Title (中): 测试半导体器件
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Application No.: US14215243Application Date: 2014-03-17
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Publication No.: US20140300410A1Publication Date: 2014-10-09
- Inventor: Henricus Cornelis Johannes BÜTHKER , Matthias ROSE
- Applicant: NXP B.V.
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Priority: EP13162597.2 20130405
- Main IPC: G05F3/24
- IPC: G05F3/24 ; H01L23/50

Abstract:
The invention provides a cascode transistor circuit with a depletion mode transistor and a switching device. A gate bias circuit is connected between the gate of the depletion mode transistor and the low power line. The gate bias circuit is adapted to compensate the forward voltage of a diode function of the switching device. The depletion mode transistor and the gate bias circuit are formed as part of an integrated circuit.
Public/Granted literature
- US09116533B2 Cascoded semiconductor devices with gate bias circuit Public/Granted day:2015-08-25
Information query
IPC分类: