发明申请
US20140327015A1 METHOD OF PRODUCING MICROSTRUCTURE OF NITRIDE SEMICONDUCTOR AND PHOTONIC CRYSTAL PREPARED ACCORDING TO THE METHOD
审中-公开
生产氮化物半导体微结构的方法和根据方法制备的光子晶体
- 专利标题： METHOD OF PRODUCING MICROSTRUCTURE OF NITRIDE SEMICONDUCTOR AND PHOTONIC CRYSTAL PREPARED ACCORDING TO THE METHOD
- 专利标题（中）： 生产氮化物半导体微结构的方法和根据方法制备的光子晶体
-
申请号： US14336978申请日： 2014-07-21
-
公开(公告)号： US20140327015A1公开(公告)日： 2014-11-06
- 发明人: Shoichi Kawashima , Takeshi Kawashima , Yasuhiro Nagatomo , Katsuyuki Hoshino
- 申请人： CANON KABUSHIKI KAISHA
- 优先权： JP2009-178421 20090730
- 主分类号： H01L29/20
- IPC分类号： H01L29/20 ; H01L29/04
摘要：
The method of producing a GaN-based microstructure includes a step of preparing a semiconductor structure provided with a trench formed in a main surface of the nitride semiconductor and a heat-treating mask covering a main surface of the nitride semiconductor excluding the trench, a first heat-treatment step of heat-treating the semiconductor structure under an atmosphere containing nitrogen element to form a crystallographic face of the nitride semiconductor on at least a part of a sidewall of the trench, a step of removing the heat-treating mask after the first heat-treatment step and a second heat-treatment step of heat-treating the semiconductor structure under an atmosphere containing nitrogen element to close an upper portion of the trench on the sidewall of which the crystallographic face is formed with a nitride semiconductor.
公开/授权文献
信息查询
IPC分类:
