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1.发明授权Nitride semiconductor surface emitting laser and method of manufacturing the same 有权氮化物半导体表面发射激光器及其制造方法公开(公告)号：US09356428B2
公开(公告)日：2016-05-31
申请号：US14067615
申请日：2013-10-30
发明人： Takeshi Kawashima
CPC分类号： H01S5/18358 , B82Y20/00 , H01S5/18308 , H01S5/18341 , H01S5/18369 , H01S5/18383 , H01S5/3063 , H01S5/34333 , H01S2301/173
摘要： A surface emitting laser in which a plurality of nitride semiconductor layers including a lower reflector, a plurality of active layers causing a gain by current injection, and an upper reflector are provided on a substrate, includes an n-type spacer layer formed between the lower reflector and an active layer closest to the lower reflector in the plurality of active layers, a p-type spacer layer formed between the upper reflector and an active layer closest to the upper reflector in the plurality of active layers, and an intermediate layer arranged between the plurality of active layers. The intermediate layer is configured from an Mg-doped layer including at least Mg, and a nitride semiconductor layer including In, and the Mg-doped layer and the nitride semiconductor layer including In are provided in that order from a side of the substrate.
摘要翻译： 一种表面发射激光器，其中包括下反射器的多个氮化物半导体层，通过电流注入引起增益的多个有源层和上反射器设置在基板上，包括形成在下部反射器之间的n型间隔层 反射器和在多个有源层中最靠近下反射器的有源层，形成在上反射器和最靠近多个有源层中的上反射器的有源层之间的p型隔离层，以及布置在 多个有源层。 中间层由至少包含Mg的Mg掺杂层和包括In的氮化物半导体层以及包含In的Mg掺杂层和氮化物半导体层从衬底侧依次设置。
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2.发明申请公开(公告)号：US20140097456A1
公开(公告)日：2014-04-10
申请号：US14049024
申请日：2013-10-08
发明人： Takeshi Kawashima
CPC分类号： H01L33/325 , B82Y20/00 , H01L27/156 , H01L33/0075 , H01L33/32 , H01S5/105 , H01S5/12 , H01S5/183 , H01S5/3063 , H01S5/34333 , H01S2301/17 , H01S2301/173 , H01S2304/04
摘要： A method for producing a light-emitting device includes the steps of: forming a layer containing In on a substrate in a reactor in which a Mg-containing raw material has been used; and forming an active layer including a nitride semiconductor on the layer containing In.
摘要翻译： 一种发光器件的制造方法，其特征在于，在使用含Mg原料的反应器中，在基板上形成含有In的层， 以及在包含In的层上形成包含氮化物半导体的有源层。
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3.发明授权公开(公告)号：US09437684B2
公开(公告)日：2016-09-06
申请号：US14336978
申请日：2014-07-21
IPC分类号： H01L29/15 , H01L29/20 , B82Y20/00 , G02B6/122 , G02B6/136 , H01L21/02 , H01L29/04 , H01S5/10 , H01S5/20 , H01S5/323
CPC分类号： H01L29/2003 , B82Y20/00 , G02B6/1225 , G02B6/136 , H01L21/0237 , H01L21/02458 , H01L21/02513 , H01L21/02516 , H01L21/0254 , H01L21/02658 , H01L21/02667 , H01L29/045 , H01S5/105 , H01S5/2095 , H01S5/32341
摘要： The method of producing a GaN-based microstructure includes a step of preparing a semiconductor structure provided with a trench formed in a main surface of the nitride semiconductor and a heat-treating mask covering a main surface of the nitride semiconductor excluding the trench, a first heat-treatment step of heat-treating the semiconductor structure under an atmosphere containing nitrogen element to form a crystallographic face of the nitride semiconductor on at least a part of a sidewall of the trench, a step of removing the heat-treating mask after the first heat-treatment step and a second heat-treatment step of heat-treating the semiconductor structure under an atmosphere containing nitrogen element to close an upper portion of the trench on the sidewall of which the crystallographic face is formed with a nitride semiconductor.
摘要翻译： 制造GaN基微结构的方法包括制备在氮化物半导体的主表面上形成有沟槽的半导体结构和覆盖除了沟槽之外的氮化物半导体的主表面的热处理掩模的步骤，第一 在包含氮元素的气氛下对半导体结构进行热处理的热处理工序，在沟槽的侧壁的至少一部分上形成氮化物半导体的结晶面，在第一工序之后，除去热处理罩 热处理步骤和在包含氮元素的气氛下对半导体结构进行热处理的第二热处理步骤，以在氮化物半导体的形成有结晶面的侧壁上封闭沟槽的上部。
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4.发明申请SEMICONDUCTOR DBR, SEMICONDUCTOR LIGHT-EMITTING DEVICE, SOLID-STATE LASER, PHOTOACOUSTIC APPARATUS, IMAGE-FORMING APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DBR 有权半导体DBR，半导体发光器件，固体激光器，光电设备，成像设备和制造半导体DBR的方法公开(公告)号：US20140377459A1
公开(公告)日：2014-12-25
申请号：US14307328
申请日：2014-06-17
发明人： Takeshi Kawashima
CPC分类号： G02B1/14 , G01N21/1702 , G02B1/105 , G03G15/04072 , H01L33/10 , H01L33/105 , H01L33/46 , H01L51/5265 , H01S3/0941 , H01S3/1633 , H01S5/18308 , H01S5/18358 , H01S5/18361 , H01S5/187 , H01S5/3063 , H01S5/3201 , H01S5/34333 , H01S5/423 , H01S2304/04
摘要： A semiconductor distributed Bragg reflector (DBR) including a first multilayer structure including a plurality of first semiconductor layers and one or more second semiconductor layers each interposed between a corresponding pair of the plurality of first semiconductor layers; a second multilayer structure including a plurality of third semiconductor layers and one or more second semiconductor layers each interposed between a corresponding pair of the plurality of third semiconductor layers; and a protection layer interposed between the first multilayer structure and the second multilayer structure. The second semiconductor layer has a lower decomposition temperature than the first semiconductor layer. The third semiconductor layer has a lower decomposition temperature than the second semiconductor layer.
摘要翻译： 一种半导体分布布拉格反射器（DBR），包括：第一多层结构，包括多个第一半导体层和一个或多个第二半导体层，每个第二半导体层插入在对应的一对多个第一半导体层之间; 第二多层结构，包括多个第三半导体层和一个或多个第二半导体层，每个第二半导体层插入在相应的一对多个第三半导体层之间; 以及插入在所述第一多层结构和所述第二多层结构之间的保护层。 第二半导体层的分解温度比第一半导体层低。 第三半导体层的分解温度比第二半导体层低。
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5.发明授权Reflector, surface-emitting laser, solid-state laser device, optoacoustic system, and image-forming apparatus 有权反射器，表面发射激光器，固态激光器件，光声系统和成像设备公开(公告)号：US09590391B2
公开(公告)日：2017-03-07
申请号：US15028320
申请日：2014-08-05
发明人： Takeshi Kawashima
CPC分类号： H01S5/18361 , B41J2/447 , B41J2/473 , G03G15/04036 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01S3/0941 , H01S5/0212
摘要： In a reflector including an AlGaN layer, an InGaN layer, and a GaN layer placed therebetween, high reflectivity and a wide reflection band are achieved. A reflector includes a substrate containing GaN; first layers containing AlxGa1-xN; second layers containing InyGa1-yN; and a third layer containing GaN, the first, second, and third layers being stacked on the substrate. The first and second layers are alternately stacked, the third layer is placed between one of the first layers and one of the second layers, x and y satisfy a specific formula, the first layers have a thickness less than the thickness of the second layers, and the second layers have an optical thickness of λ/8 to 3λ/8, where λ is the central wavelength of the reflection. band of the reflector.
摘要翻译： 在包括AlGaN层，InGaN层和放置在其间的GaN层的反射器中，实现了高反射率和宽的反射带。 反射器包括含有GaN的衬底; 含有Al x Ga 1-x N的第一层; 含InyGa1-yN的第二层; 以及包含GaN的第三层，所述第一层，第二层和第三层堆叠在所述衬底上。 第一层和第二层交替层叠，第三层位于第一层之一和第二层之一中，x和y满足特定的公式，第一层的厚度小于第二层的厚度， 第二层的光学厚度为λ/ 8〜3λ/ 8，其中λ为反射的中心波长。 反射镜的带。
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6.发明授权Nitride semiconductor light-emitting device with a layer containing In and Mg and method for producing the same 有权含有In和Mg的氮化物半导体发光装置及其制造方法公开(公告)号：US09287454B2
公开(公告)日：2016-03-15
申请号：US14049024
申请日：2013-10-08
发明人： Takeshi Kawashima
IPC分类号： H01L27/15 , H01L33/32 , H01L33/00 , B82Y20/00 , H01S5/10 , H01S5/12 , H01S5/183 , H01S5/343 , H01S5/30
CPC分类号： H01L33/325 , B82Y20/00 , H01L27/156 , H01L33/0075 , H01L33/32 , H01S5/105 , H01S5/12 , H01S5/183 , H01S5/3063 , H01S5/34333 , H01S2301/17 , H01S2301/173 , H01S2304/04
摘要： A method for producing a light-emitting device includes the steps of: forming a layer containing In on a substrate in a reactor in which a Mg-containing raw material has been used; and forming an active layer including a nitride semiconductor on the layer containing In.
摘要翻译： 一种发光器件的制造方法，其特征在于，在使用含Mg原料的反应器中，在基板上形成含有In的层， 以及在包含In的层上形成包含氮化物半导体的有源层。
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7.发明申请METHOD OF PRODUCING MICROSTRUCTURE OF NITRIDE SEMICONDUCTOR AND PHOTONIC CRYSTAL PREPARED ACCORDING TO THE METHOD 审中-公开生产氮化物半导体微结构的方法和根据方法制备的光子晶体公开(公告)号：US20140327015A1
公开(公告)日：2014-11-06
申请号：US14336978
申请日：2014-07-21
CPC分类号： H01L29/2003 , B82Y20/00 , G02B6/1225 , G02B6/136 , H01L21/0237 , H01L21/02458 , H01L21/02513 , H01L21/02516 , H01L21/0254 , H01L21/02658 , H01L21/02667 , H01L29/045 , H01S5/105 , H01S5/2095 , H01S5/32341
摘要： The method of producing a GaN-based microstructure includes a step of preparing a semiconductor structure provided with a trench formed in a main surface of the nitride semiconductor and a heat-treating mask covering a main surface of the nitride semiconductor excluding the trench, a first heat-treatment step of heat-treating the semiconductor structure under an atmosphere containing nitrogen element to form a crystallographic face of the nitride semiconductor on at least a part of a sidewall of the trench, a step of removing the heat-treating mask after the first heat-treatment step and a second heat-treatment step of heat-treating the semiconductor structure under an atmosphere containing nitrogen element to close an upper portion of the trench on the sidewall of which the crystallographic face is formed with a nitride semiconductor.
摘要翻译： 制造GaN基微结构的方法包括制备在氮化物半导体的主表面上形成有沟槽的半导体结构和覆盖除了沟槽之外的氮化物半导体的主表面的热处理掩模的步骤，第一 在包含氮元素的气氛下对半导体结构进行热处理的热处理工序，在沟槽的侧壁的至少一部分上形成氮化物半导体的结晶面，在第一工序之后，除去热处理罩 热处理步骤和在包含氮元素的气氛下对半导体结构进行热处理的第二热处理步骤，以在氮化物半导体的形成有结晶面的侧壁上封闭沟槽的上部。
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公开(公告)号：US09864106B2
公开(公告)日：2018-01-09
申请号：US14307328
申请日：2014-06-17
发明人： Takeshi Kawashima
IPC分类号： H01L33/10 , G02B1/10 , G01N21/17 , G03G15/04 , H01S5/187 , H01L51/52 , H01L33/46 , H01S3/0941 , H01S5/183 , H01S5/32 , H01S5/343 , H01S5/42 , H01S3/16 , H01S5/30
CPC分类号： G02B1/14 , G01N21/1702 , G02B1/105 , G03G15/04072 , H01L33/10 , H01L33/105 , H01L33/46 , H01L51/5265 , H01S3/0941 , H01S3/1633 , H01S5/18308 , H01S5/18358 , H01S5/18361 , H01S5/187 , H01S5/3063 , H01S5/3201 , H01S5/34333 , H01S5/423 , H01S2304/04
摘要： A semiconductor distributed Bragg reflector (DBR) including a first multilayer structure including a plurality of first semiconductor layers and one or more second semiconductor layers each interposed between a corresponding pair of the plurality of first semiconductor layers; a second multilayer structure including a plurality of third semiconductor layers and one or more second semiconductor layers each interposed between a corresponding pair of the plurality of third semiconductor layers; and a protection layer interposed between the first multilayer structure and the second multilayer structure. The second semiconductor layer has a lower decomposition temperature than the first semiconductor layer. The third semiconductor layer has a lower decomposition temperature than the second semiconductor layer.
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9.发明申请REFLECTOR, SURFACE-EMITTING LASER, SOLID-STATE LASER DEVICE, OPTOACOUSTIC SYSTEM, AND IMAGE-FORMING APPARATUS 有权反射器，表面发射激光器，固体激光器件，光学系统和成像装置公开(公告)号：US20160268774A1
公开(公告)日：2016-09-15
申请号：US15028320
申请日：2014-08-05
发明人： Takeshi Kawashima
CPC分类号： H01S5/18361 , B41J2/447 , B41J2/473 , G03G15/04036 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01S3/0941 , H01S5/0212
摘要： In a reflector including an AlGaN layer, an InGaN layer, and a GaN layer placed therebetween, high reflectivity and a wide reflection band are achieved. A reflector includes a substrate containing GaN; first layers containing AlxGa1-xN; second layers containing InyGa1-yN; and a third layer containing GaN, the first, second, and third layers being stacked on the substrate. The first and second layers are alternately stacked, the third layer is placed between. one of the first layers and one of the second layers, x and y satisfy a specific formula, the first layers have a thickness less than the thickness of the second layers, and the second layers have an optical thickness of λ/8 to 3λ/8, where λ is the central wavelength of the reflection. band of the reflector.
摘要翻译： 在包括AlGaN层，InGaN层和放置在其间的GaN层的反射器中，实现了高反射率和宽的反射带。 反射器包括含有GaN的衬底; 含有Al x Ga 1-x N的第一层; 含InyGa1-yN的第二层; 以及包含GaN的第三层，所述第一层，第二层和第三层堆叠在所述衬底上。 第一层和第二层交替堆叠，第三层位于其间。 第一层和第二层中的一层x和y满足特定的公式，第一层的厚度小于第二层的厚度，第二层的光学厚度为λ/ 8〜3λ/ 8，其中λ是反射的中心波长。 反射镜的带。
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10.发明申请NITRIDE SEMICONDUCTOR SURFACE EMITTING LASER AND METHOD OF MANUFACTURING THE SAME 有权氮化物半导体表面发射激光器及其制造方法公开(公告)号：US20140126600A1
公开(公告)日：2014-05-08
申请号：US14067615
申请日：2013-10-30
发明人： Takeshi Kawashima
IPC分类号： H01S5/183
CPC分类号： H01S5/18358 , B82Y20/00 , H01S5/18308 , H01S5/18341 , H01S5/18369 , H01S5/18383 , H01S5/3063 , H01S5/34333 , H01S2301/173
摘要： A surface emitting laser in which a plurality of nitride semiconductor layers including a lower reflector, a plurality of active layers causing a gain by current injection, and an upper reflector are provided on a substrate, includes an n-type spacer layer formed between the lower reflector and an active layer closest to the lower reflector in the plurality of active layers, a p-type spacer layer formed between the upper reflector and an active layer closest to the upper reflector in the plurality of active layers, and an intermediate layer arranged between the plurality of active layers. The intermediate layer is configured from an Mg-doped layer including at least Mg, and a nitride semiconductor layer including In, and the Mg-doped layer and the nitride semiconductor layer including In are provided in that order from a side of the substrate.
摘要翻译： 一种表面发射激光器，其中包括下反射器的多个氮化物半导体层，通过电流注入引起增益的多个有源层和上反射器设置在基板上，包括形成在下部反射器之间的n型间隔层 反射器和在多个有源层中最靠近下反射器的有源层，形成在上反射器和最靠近多个有源层中的上反射器的有源层之间的p型隔离层，以及布置在 多个有源层。 中间层由至少包含Mg的Mg掺杂层和包括In的氮化物半导体层以及包含In的Mg掺杂层和氮化物半导体层从衬底侧依次设置。
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