Invention Application
- Patent Title: SEMICONDUCTOR PROCESSING METHOD
- Patent Title (中): 半导体处理方法
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Application No.: US13894031Application Date: 2013-05-14
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Publication No.: US20140342473A1Publication Date: 2014-11-20
- Inventor: Sheng Zhang , Guang-You Yu , Ying-Jie Xu , Chaw Che
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L21/66
- IPC: H01L21/66
Abstract:
A method for detecting metal contamination from a film-forming process causing interface traps is described. The film-forming process is performed to form a dielectric film on a wafer. An annealing treatment is performed to reduce the interface traps between the wafer and the dielectric film. Thereafter, the bulk recombination lifetime (BRLT) of the wafer is measured to estimate the amount of the metal contamination.
Information query
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