公开(公告)号：US20140342473A1

公开(公告)日：2014-11-20

申请号：US13894031

申请日：2013-05-14

Applicant: United Microelectronics Corp.

Inventor： Sheng Zhang ,  Guang-You Yu ,  Ying-Jie Xu ,  Chaw Che

IPC: H01L21/66

CPC classification number: H01L21/324 ,  H01L21/28185 ,  H01L21/28202 ,  H01L22/14

Abstract: A method for detecting metal contamination from a film-forming process causing interface traps is described. The film-forming process is performed to form a dielectric film on a wafer. An annealing treatment is performed to reduce the interface traps between the wafer and the dielectric film. Thereafter, the bulk recombination lifetime (BRLT) of the wafer is measured to estimate the amount of the metal contamination.

Abstract translation: 描述了一种从成膜过程引起界面陷阱中检测金属污染的方法。 进行成膜处理以在晶片上形成电介质膜。 进行退火处理以减少晶片和电介质膜之间的界面陷阱。 此后，测量晶片的体积复合寿命（BRLT）以估计金属污染的量。