发明申请
US20140367640A1 LIGHT-EMITTING ELEMENT, EPITAXIAL WAFER, AND METHOD FOR PRODUCING THE EPITAXIAL WAFER
审中-公开
发光元件，外延波形和生产外延波形的方法
- 专利标题： LIGHT-EMITTING ELEMENT, EPITAXIAL WAFER, AND METHOD FOR PRODUCING THE EPITAXIAL WAFER
- 专利标题（中）： 发光元件，外延波形和生产外延波形的方法
-
申请号： US14376388申请日： 2013-01-30
-
公开(公告)号： US20140367640A1公开(公告)日： 2014-12-18
- 发明人: Kei Fujii , Takashi Ishizuka , Katsushi Akita
- 申请人： Sumitomo Electric Industries, Ltd.
- 优先权： JP2012-034400 20120220
- 国际申请： PCT/JP2013/051995 WO 20130130
- 主分类号： H01L33/06
- IPC分类号： H01L33/06 ; H01L33/30 ; H01L33/00
摘要：
Provided are an epitaxial wafer and a light-emitting element having a type-II MQW formed of III-V compound semiconductors and configured to emit light with a sufficiently high intensity. The method includes a step of growing an active layer having a type-II multi-quantum well structure (MQW) on a III-V compound semiconductor substrate, wherein, in the step of forming the type-II multi-quantum well structure, the type-II multi-quantum well structure is formed by metal-organic vapor phase epitaxy using only metal-organic sources such that a number of pairs of the type-II multi-quantum well structure is 25 or more.
信息查询
IPC分类:
