发明申请
US20140367762A1 METHOD OF FORMING AN ACTIVE AREA WITH FLOATING GATE NEGATIVE OFFSET PROFILE IN FG NAND MEMORY
有权
在FG NAND存储器中形成具有浮动栅极负偏移轮廓的活动区域的方法
- 专利标题： METHOD OF FORMING AN ACTIVE AREA WITH FLOATING GATE NEGATIVE OFFSET PROFILE IN FG NAND MEMORY
- 专利标题（中）： 在FG NAND存储器中形成具有浮动栅极负偏移轮廓的活动区域的方法
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申请号： US14472611申请日： 2014-08-29
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公开(公告)号： US20140367762A1公开(公告)日： 2014-12-18
- 发明人: Ming Tian , Jayavel Pachamuthu , Atsushi Suyama , James Kai , Raghuveer S. Makala , Yao-Sheng Lee , Johann Alsmeier , Henry Chien , Masanori Terahara , Hirofumi Watatani
- 申请人： SANDISK TECHNOLOGIES INC.
- 主分类号： H01L29/788
- IPC分类号： H01L29/788 ; H01L27/115 ; H01L29/66
摘要：
A stack can be patterned by a first etch process to form an opening defining sidewall surfaces of a patterned material stack. A masking layer can be non-conformally deposited on sidewalls of an upper portion of the patterned material stack, while not being deposited on sidewalls of a lower portion of the patterned material stack. The sidewalls of a lower portion of the opening can be laterally recessed employing a second etch process, which can include an isotropic etch component. The sidewalls of the upper portion of the opening can protrude inward toward the opening to form an overhang over the sidewalls of the lower portion of the opening. The overhang can be employed to form useful structures such as an negative offset profile in a floating gate device or vertically aligned control gate electrodes for vertical memory devices.
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