发明申请
- 专利标题: Graphene on Semiconductor Detector
- 专利标题(中): 石墨烯半导体探测器
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申请号: US14471001申请日: 2014-08-28
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公开(公告)号: US20140367824A1公开(公告)日: 2014-12-18
- 发明人: Francis J. Kub , Karl D. Hobart , Travis J. Anderson
- 申请人: Francis J. Kub , Karl D. Hobart , Travis J. Anderson
- 申请人地址: US DC Washington
- 专利权人: The Govemment of the United States of America, as represented by the Secretary of the Navy
- 当前专利权人: The Govemment of the United States of America, as represented by the Secretary of the Navy
- 当前专利权人地址: US DC Washington
- 主分类号: H01L31/028
- IPC分类号: H01L31/028
摘要:
Ultraviolet or Extreme Ultraviolet and/or visible detector apparatus and fabrication processes are presented, in which the detector includes a thin graphene electrode structure disposed over a semiconductor surface to provide establish a potential in the semiconductor material surface and to collect photogenerated carriers, with a first contact providing a top side or bottom side connection for the semiconductor structure and a second contact for connection to the graphene layer.
公开/授权文献
- US09029833B2 Graphene on semiconductor detector 公开/授权日:2015-05-12
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