发明申请
US20140367824A1 Graphene on Semiconductor Detector 有权
石墨烯半导体探测器

Graphene on Semiconductor Detector
摘要:
Ultraviolet or Extreme Ultraviolet and/or visible detector apparatus and fabrication processes are presented, in which the detector includes a thin graphene electrode structure disposed over a semiconductor surface to provide establish a potential in the semiconductor material surface and to collect photogenerated carriers, with a first contact providing a top side or bottom side connection for the semiconductor structure and a second contact for connection to the graphene layer.
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