公开(公告)号：US09685513B2

公开(公告)日：2017-06-20

申请号：US14060916

申请日：2013-10-23

申请人： Francis J. Kub ,  Travis J. Anderson ,  Karl D. Hobart

发明人： Francis J. Kub ,  Travis J. Anderson ,  Karl D. Hobart

IPC分类号： H01L23/532 ,  H01L29/16 ,  H01L29/205 ,  H01L29/20 ,  H01L29/78 ,  H01L29/66 ,  H01L29/778 ,  H01L23/373

CPC分类号： H01L29/1602 ,  H01L23/3732 ,  H01L23/5329 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/78

摘要： Semiconductor devices that include a semiconductor structure integrated with one or more diamond material layers. A first diamond material layer is formed on a bottom surface and optionally, the side surfaces of the semiconductor structure. In some embodiments, at least a portion of the semiconductor structure is embedded in the diamond. An electrical device can be formed on a top surface of the semiconductor structure. A second diamond material layer can be formed on the top surface of the semiconductor structure. The semiconductor structure can include a III-nitride material such as GaN, which can be embedded within a the first diamond material layer or encased by the first and/or second diamond material layer.

公开(公告)号：US09196614B2

公开(公告)日：2015-11-24

申请号：US14617510

申请日：2015-02-09

申请人： Francis J. Kub ,  Travis J. Anderson ,  Andrew D. Koehler ,  Karl D. Hobart

发明人： Francis J. Kub ,  Travis J. Anderson ,  Andrew D. Koehler ,  Karl D. Hobart

IPC分类号： H01L27/095 ,  H01L29/78 ,  H01L29/20 ,  H01L29/66 ,  H01L29/417 ,  H01L29/778 ,  H01L29/10 ,  H01L21/285 ,  H01L29/45 ,  H01L29/205 ,  H01L21/8228 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/04 ,  H01L29/201 ,  H01L29/36 ,  H01L21/8252 ,  H01L21/02 ,  H01L21/265 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/762 ,  H01L29/207 ,  H01L29/16 ,  H01L29/423 ,  H01L29/51

CPC分类号： H01L27/095 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/26546 ,  H01L21/28575 ,  H01L21/28587 ,  H01L21/30612 ,  H01L21/3065 ,  H01L21/762 ,  H01L21/8228 ,  H01L21/8238 ,  H01L21/8252 ,  H01L27/092 ,  H01L27/0921 ,  H01L27/0922 ,  H01L29/045 ,  H01L29/1075 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/207 ,  H01L29/365 ,  H01L29/407 ,  H01L29/41725 ,  H01L29/41766 ,  H01L29/42364 ,  H01L29/452 ,  H01L29/51 ,  H01L29/66431 ,  H01L29/66439 ,  H01L29/66462 ,  H01L29/66477 ,  H01L29/778 ,  H01L29/7781 ,  H01L29/7782 ,  H01L29/7783 ,  H01L29/7784 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/78 ,  H01L29/7831

摘要： An inverted P-channel III-nitride field effect transistor with hole carriers in the channel comprising a gallium-polar III-Nitride barrier material, a second material layer, a two-dimensional hole gas in the second layer, and wherein the gallium-polar material comprises one or more III-Nitride epitaxial material layers grown such that when GaN is epitaxially grown the top surface of the epitaxial layer is gallium-polar. A method of making an inverted P-channel III-nitride field effect transistor with hole carriers in the channel comprising selecting a face or offcut orientation of a substrate so that the gallium-polar (0001) face is the dominant face, growing a nucleation layer, growing a gallium-polar epitaxial layer, doping the epitaxial layer, growing a barrier layer, etching the GaN, forming contacts, performing device isolation, defining a gate opening, depositing and defining gate metal, making a contact window, depositing and defining a thick metal.

摘要翻译： 在通道中具有空穴载流子的反向P沟道III族氮化物场效应晶体管，其包含镓极性III-氮化物阻挡材料，第二材料层，第二层中的二维空穴气体，并且其中镓极性 材料包括一个或多个生长的III-Nitride外延材料层，使得当外延生长GaN时，外延层的顶表面是镓极性的。 在通道中制造具有空穴载流子的反相P沟道III族氮化物场效应晶体管的方法，包括选择衬底的面或切口取向，使得镓极（0001）面是主要面，生长成核层 ，生长镓极性外延层，掺杂外延层，生长势垒层，蚀刻GaN，形成接触，执行器件隔离，限定栅极开口，沉积和限定栅极金属，形成接触窗口，沉积和限定 厚金属。

公开(公告)号：US20150221760A1

公开(公告)日：2015-08-06

申请号：US14617510

申请日：2015-02-09

申请人： Francis J. Kub ,  Travis J. Anderson ,  Andrew D. Koehler ,  Karl D. Hobart

发明人： Francis J. Kub ,  Travis J. Anderson ,  Andrew D. Koehler ,  Karl D. Hobart

IPC分类号： H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L29/207 ,  H01L29/201 ,  H01L21/762 ,  H01L21/02 ,  H01L21/306 ,  H01L21/265 ,  H01L21/3065 ,  H01L29/36 ,  H01L29/66 ,  H01L29/04

CPC分类号： H01L27/095 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/26546 ,  H01L21/28575 ,  H01L21/28587 ,  H01L21/30612 ,  H01L21/3065 ,  H01L21/762 ,  H01L21/8228 ,  H01L21/8238 ,  H01L21/8252 ,  H01L27/092 ,  H01L27/0921 ,  H01L27/0922 ,  H01L29/045 ,  H01L29/1075 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/207 ,  H01L29/365 ,  H01L29/407 ,  H01L29/41725 ,  H01L29/41766 ,  H01L29/42364 ,  H01L29/452 ,  H01L29/51 ,  H01L29/66431 ,  H01L29/66439 ,  H01L29/66462 ,  H01L29/66477 ,  H01L29/778 ,  H01L29/7781 ,  H01L29/7782 ,  H01L29/7783 ,  H01L29/7784 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/78 ,  H01L29/7831

摘要： An inverted P-channel III-nitride field effect transistor with hole carriers in the channel comprising a gallium-polar III-Nitride first material, a barrier material layer, a two-dimensional hole gas in the barrier layer, and wherein the gallium-polar material comprises one or more III-Nitride epitaxial material layers grown such that when GaN is epitaxially grown the top surface of the epitaxial layer is gallium-polar. A method of making an inverted P-channel III-nitride field effect transistor with hole carriers in the channel comprising selecting a face or offcut orientation of a substrate so that the gallium-polar (0001) face is the dominant face, growing a nucleation layer, growing a gallium-polar epitaxial layer, doping the epitaxial layer, growing a barrier layer, etching the GaN, forming contacts, performing device isolation, defining a gate opening, depositing and defining gate metal, making a contact window, depositing and defining a thick metal.

摘要翻译： 在通道中具有空穴载流子的反相P沟道III族氮化物场效应晶体管，其包含镓极性III-氮化物第一材料，阻挡材料层，阻挡层中的二维空穴气体，并且其中镓极性 材料包括一个或多个生长的III-Nitride外延材料层，使得当外延生长GaN时，外延层的顶表面是镓极性的。 在通道中制造具有空穴载流子的反相P沟道III族氮化物场效应晶体管的方法，包括选择衬底的面或切口取向，使得镓极（0001）面是主要面，生长成核层 ，生长镓极性外延层，掺杂外延层，生长势垒层，蚀刻GaN，形成接触，执行器件隔离，限定栅极开口，沉积和限定栅极金属，形成接触窗口，沉积和限定 厚金属。

公开(公告)号：US09029833B2

公开(公告)日：2015-05-12

申请号：US14471001

申请日：2014-08-28

申请人： Francis J. Kub ,  Karl D. Hobart ,  Travis J. Anderson

发明人： Francis J. Kub ,  Karl D. Hobart ,  Travis J. Anderson

IPC分类号： H01L29/06 ,  H01L31/00 ,  H01L31/028 ,  H01L27/148 ,  H01L31/0336 ,  H01L27/146

CPC分类号： H01L31/028 ,  H01L27/14643 ,  H01L27/14692 ,  H01L27/14694 ,  H01L27/148 ,  H01L31/0336

摘要： Ultraviolet or Extreme Ultraviolet and/or visible detector apparatus and fabrication processes are presented, in which the detector includes a thin graphene electrode structure disposed over a semiconductor surface to provide establish a potential in the semiconductor material surface and to collect photogenerated carriers, with a first contact providing a top side or bottom side connection for the semiconductor structure and a second contact for connection to the graphene layer.

摘要翻译： 提出了紫外或极紫外和/或可见的检测器装置和制造方法，其中检测器包括设置在半导体表面上的薄的石墨烯电极结构，以在半导体材料表面中建立电位并且收集光生载流子，第一 接触提供用于半导体结构的顶侧或底侧连接以及用于连接到石墨烯层的第二接触。

公开(公告)号：US09275998B2

公开(公告)日：2016-03-01

申请号：US14265214

申请日：2014-04-29

申请人： Francis J. Kub ,  Travis J. Anderson ,  Andrew D. Koehler ,  Karl D. Hobart

发明人： Francis J. Kub ,  Travis J. Anderson ,  Andrew D. Koehler ,  Karl D. Hobart

IPC分类号： H01L29/778 ,  H01L29/20 ,  H01L21/335 ,  H01L21/20 ,  H01L27/095 ,  H01L29/78 ,  H01L29/40 ,  H01L29/66 ,  H01L29/417 ,  H01L29/10 ,  H01L21/285 ,  H01L29/45 ,  H01L29/205 ,  H01L21/8228 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/04 ,  H01L29/201 ,  H01L29/36 ,  H01L21/8252 ,  H01L21/02 ,  H01L21/265 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/762 ,  H01L29/207 ,  H01L29/16 ,  H01L29/423 ,  H01L29/51

CPC分类号： H01L27/095 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/26546 ,  H01L21/28575 ,  H01L21/28587 ,  H01L21/30612 ,  H01L21/3065 ,  H01L21/762 ,  H01L21/8228 ,  H01L21/8238 ,  H01L21/8252 ,  H01L27/092 ,  H01L27/0921 ,  H01L27/0922 ,  H01L29/045 ,  H01L29/1075 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/207 ,  H01L29/365 ,  H01L29/407 ,  H01L29/41725 ,  H01L29/41766 ,  H01L29/42364 ,  H01L29/452 ,  H01L29/51 ,  H01L29/66431 ,  H01L29/66439 ,  H01L29/66462 ,  H01L29/66477 ,  H01L29/778 ,  H01L29/7781 ,  H01L29/7782 ,  H01L29/7783 ,  H01L29/7784 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/78 ,  H01L29/7831

摘要： An inverted P-channel III-nitride field effect transistor with hole carriers in the channel comprising a gallium-polar III-Nitride grown epitaxially on a substrate, a barrier, a two-dimensional hole gas in the barrier layer material at the heterointerface of the first material, and wherein the gallium-polar III-Nitride material comprises III-Nitride epitaxial material layers grown in such a manner that when GaN is epitaxially grown the top surface of the epitaxial layer is gallium-polar. A method of making a P-channel III-nitride field effect transistor with hole carriers in the channel comprising selecting a face of a substrate so that the gallium-polar (0001) face is the dominant face for growth of III-Nitride epitaxial layer growth material, growing a GaN epitaxial layer, doping, growing a barrier, etching, forming a contact, performing device isolation, defining a gate opening, defining gate metal, making a contact window, and depositing and defining a thick metal.

摘要翻译： 在通道中具有空穴载流子的反向P沟道III族氮化物场效应晶体管，包括在衬底上外延生长的镓极化III-氮化物，势垒，阻挡层材料中二维空穴气体在异质界面处 第一材料，并且其中所述镓极性III-氮化物材料包含以这样的方式生长的III-氮化物外延材料层，使得当外延生长GaN时，所述外延层的顶表面是镓极性的。 在通道中制造具有空穴载流子的P沟道III族氮化物场效应晶体管的方法，包括选择衬底的表面，使得镓极（0001）面是III-氮化物外延层生长生长的主要面 材料，生长GaN外延层，掺杂，生长势垒，蚀刻，形成接触，执行器件隔离，限定栅极开口，限定栅极金属，形成接触窗口以及沉积和限定厚金属。

公开(公告)号：US20140367824A1

公开(公告)日：2014-12-18

申请号：US14471001

申请日：2014-08-28

申请人： Francis J. Kub ,  Karl D. Hobart ,  Travis J. Anderson

发明人： Francis J. Kub ,  Karl D. Hobart ,  Travis J. Anderson

IPC分类号： H01L31/028

CPC分类号： H01L31/028 ,  H01L27/14643 ,  H01L27/14692 ,  H01L27/14694 ,  H01L27/148 ,  H01L31/0336

摘要： Ultraviolet or Extreme Ultraviolet and/or visible detector apparatus and fabrication processes are presented, in which the detector includes a thin graphene electrode structure disposed over a semiconductor surface to provide establish a potential in the semiconductor material surface and to collect photogenerated carriers, with a first contact providing a top side or bottom side connection for the semiconductor structure and a second contact for connection to the graphene layer.

摘要翻译： 提出了紫外或极紫外和/或可见的检测器装置和制造方法，其中检测器包括设置在半导体表面上的薄的石墨烯电极结构，以在半导体材料表面中建立电位并且收集光生载流子，第一 接触提供用于半导体结构的顶侧或底侧连接以及用于连接到石墨烯层的第二接触。

公开(公告)号：US20150221727A1

公开(公告)日：2015-08-06

申请号：US14265214

申请日：2014-04-29

申请人： Francis J. Kub ,  Travis J. Anderson ,  Andrew D. Koehler ,  Karl D. Hobart

发明人： Francis J. Kub ,  Travis J. Anderson ,  Andrew D. Koehler ,  Karl D. Hobart

IPC分类号： H01L29/20 ,  H01L29/205 ,  H01L29/66 ,  H01L29/778

CPC分类号： H01L27/095 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/26546 ,  H01L21/28575 ,  H01L21/28587 ,  H01L21/30612 ,  H01L21/3065 ,  H01L21/762 ,  H01L21/8228 ,  H01L21/8238 ,  H01L21/8252 ,  H01L27/092 ,  H01L27/0921 ,  H01L27/0922 ,  H01L29/045 ,  H01L29/1075 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/207 ,  H01L29/365 ,  H01L29/407 ,  H01L29/41725 ,  H01L29/41766 ,  H01L29/42364 ,  H01L29/452 ,  H01L29/51 ,  H01L29/66431 ,  H01L29/66439 ,  H01L29/66462 ,  H01L29/66477 ,  H01L29/778 ,  H01L29/7781 ,  H01L29/7782 ,  H01L29/7783 ,  H01L29/7784 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/78 ,  H01L29/7831

摘要： An inverted P-channel III-nitride field effect transistor with hole carriers in the channel comprising a gallium-polar III-Nitride grown epitaxially on a substrate, a barrier, a two-dimensional hole gas in the barrier layer material at the heterointerface of the first material, and wherein the gallium-polar III-Nitride material comprises III-Nitride epitaxial material layers grown in such a manner that when GaN is epitaxially grown the top surface of the epitaxial layer is gallium-polar. A method of making a P-channel III-nitride field effect transistor with hole carriers in the channel comprising selecting a face of a substrate so that the gallium-polar (0001) face is the dominant face for growth of III-Nitride epitaxial layer growth material, growing a GaN epitaxial layer, doping, growing a barrier, etching, forming a contact, performing device isolation, defining a gate opening, defining gate metal, making a contact window, and depositing and defining a thick metal.

摘要翻译： 在通道中具有空穴载流子的反向P沟道III族氮化物场效应晶体管，包括在衬底上外延生长的镓极化III-氮化物，势垒，阻挡层材料中二维空穴气体在异质界面处 第一材料，并且其中所述镓极性III-氮化物材料包含以这样的方式生长的III-氮化物外延材料层，使得当外延生长GaN时，所述外延层的顶表面是镓极性的。 在通道中制造具有空穴载流子的P沟道III族氮化物场效应晶体管的方法，包括选择衬底的表面，使得镓极（0001）面是III-氮化物外延层生长生长的主要面 材料，生长GaN外延层，掺杂，生长势垒，蚀刻，形成接触，执行器件隔离，限定栅极开口，限定栅极金属，形成接触窗口以及沉积和限定厚金属。

公开(公告)号：US09006791B2

公开(公告)日：2015-04-14

申请号：US14169334

申请日：2014-01-31

申请人： Francis J. Kub ,  Travis J. Anderson ,  Andrew D. Koehler ,  Karl D. Hobart

发明人： Francis J. Kub ,  Travis J. Anderson ,  Andrew D. Koehler ,  Karl D. Hobart

IPC分类号： H01L29/778 ,  H01L29/66 ,  H01L21/335 ,  H01L29/78 ,  H01L29/20 ,  H01L29/417 ,  H01L29/10 ,  H01L29/16 ,  H01L29/423

CPC分类号： H01L27/095 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/26546 ,  H01L21/28575 ,  H01L21/28587 ,  H01L21/30612 ,  H01L21/3065 ,  H01L21/762 ,  H01L21/8228 ,  H01L21/8238 ,  H01L21/8252 ,  H01L27/092 ,  H01L27/0921 ,  H01L27/0922 ,  H01L29/045 ,  H01L29/1075 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/207 ,  H01L29/365 ,  H01L29/407 ,  H01L29/41725 ,  H01L29/41766 ,  H01L29/42364 ,  H01L29/452 ,  H01L29/51 ,  H01L29/66431 ,  H01L29/66439 ,  H01L29/66462 ,  H01L29/66477 ,  H01L29/778 ,  H01L29/7781 ,  H01L29/7782 ,  H01L29/7783 ,  H01L29/7784 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/78 ,  H01L29/7831

摘要： A non-inverted P-channel III-nitride field effect transistor with hole carriers in the channel comprising a nitrogen-polar III-Nitride first material, a barrier material layer, a two-dimensional hole gas in the barrier layer, and wherein the nitrogen-polar III-Nitride material comprises one or more III-Nitride epitaxial material layers grown in such a manner that when GaN is epitaxially grown the top surface of the epitaxial layer is nitrogen-polar. A method of making a P-channel III-nitride field effect transistor with hole carriers in the channel comprising selecting a face or offcut orientation of a substrate so that the nitrogen-polar (001) face is the dominant face, growing a nucleation layer, growing a GaN epitaxial layer, doping the epitaxial layer, growing a barrier layer, etching the GaN, forming contacts, performing device isolation, defining a gate opening, depositing and defining gate metal, making a contact window, depositing and defining a thick metal.

摘要翻译： 在沟道中具有空穴载流子的非反相P沟道III族氮化物场效应晶体管包括氮极III-氮化物第一材料，阻挡材料层，阻挡层中的二维空穴气体，其中氮 极化III-氮化物材料包括以这样的方式生长的一个或多个III-氮化物外延材料层，即当外延生长GaN时，外延层的顶表面是氮极性的。 在通道中制造具有空穴载流子的P沟道III族氮化物场效应晶体管的方法，包括选择基板的面或切口取向，使得氮极（001）面是主要面，生长成核层， 生长GaN外延层，掺杂外延层，生长势垒层，蚀刻GaN，形成接触，执行器件隔离，限定栅极开口，沉积和限定栅极金属，形成接触窗口，沉积和限定厚金属。

公开(公告)号：US20140110722A1

公开(公告)日：2014-04-24

申请号：US14060916

申请日：2013-10-23

申请人： Francis J. Kub ,  Travis J. Anderson ,  Karl D. Hobart

发明人： Francis J. Kub ,  Travis J. Anderson ,  Karl D. Hobart

IPC分类号： H01L29/16 ,  H01L29/205 ,  H01L29/78 ,  H01L29/20

CPC分类号： H01L29/1602 ,  H01L23/3732 ,  H01L23/5329 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/78

摘要： Semiconductor devices that include a semiconductor structure integrated with one or more diamond material layers. A first diamond material layer is formed on a bottom surface and optionally, the side surfaces of the semiconductor structure. In some embodiments, at least a portion of the semiconductor structure is embedded in the diamond. An electrical device can be formed on a top surface of the semiconductor structure. A second diamond material layer can be formed on the top surface of the semiconductor structure. The semiconductor structure can include a III-nitride material such as GaN, which can be embedded within a the first diamond material layer or encased by the first and/or second diamond material layer.

摘要翻译： 半导体器件包括与一个或多个金刚石材料层集成的半导体结构。 第一金刚石材料层形成在半导体结构的底表面和任选的侧表面上。 在一些实施例中，半导体结构的至少一部分嵌入在金刚石中。 电气装置可以形成在半导体结构的顶表面上。 可以在半导体结构的顶表面上形成第二金刚石材料层。 半导体结构可以包括诸如GaN的III族氮化物材料，其可以嵌入在第一金刚石材料层内或被第一和/或第二金刚石材料层包围。

公开(公告)号：US09246305B1

公开(公告)日：2016-01-26

申请号：US14663486

申请日：2015-03-20

申请人： Francis J. Kub ,  Travis J. Anderson ,  Karl D. Hobart

发明人： Francis J. Kub ,  Travis J. Anderson ,  Karl D. Hobart

IPC分类号： H01S5/00 ,  H01S5/024 ,  H01L33/58 ,  H01L33/64 ,  H01L33/32 ,  H01S5/343 ,  H01L33/06 ,  H01L33/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/183

CPC分类号： H01S5/02484 ,  H01L33/06 ,  H01L33/32 ,  H01L33/44 ,  H01L33/56 ,  H01L33/641 ,  H01L2933/0025 ,  H01S5/0207 ,  H01S5/02461 ,  H01S5/02469 ,  H01S5/0422 ,  H01S5/183 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/32341 ,  H01S2301/176

摘要： A light-emitting device having one or more diamond layers integrated therein and methods for forming a light-emitting device with integrated diamond layers. The diamond is grown either directly on the semiconductor material comprising the light-emitting structure, on a nucleation layer deposited on the semiconductor material, or on a dielectric layer deposited on the semiconductor material before growth of the diamond layer. The device can include a trench or thermal shunt formed in the substrate on the backside of the device, or can include a heat sink to provide additional thermal management.

摘要翻译： 其中集成有一个或多个金刚石层的发光器件和用于形成具有集成金刚石层的发光器件的方法。 金刚石直接在包含发光结构的半导体材料上生长，沉积在半导体材料上的成核层上，或在金刚石层生长之前沉积在半导体材料上的电介质层上生长。 该装置可以包括形成在装置的背面上的衬底中的沟槽或热分流器，或者可以包括散热器以提供额外的热管理。