Invention Application
US20140370275A1 SUBSTRATE WITH TRANSPARENT ELECTRODE AND METHOD FOR MANUFACTURING SAME
审中-公开
具有透明电极的基板及其制造方法
- Patent Title: SUBSTRATE WITH TRANSPARENT ELECTRODE AND METHOD FOR MANUFACTURING SAME
- Patent Title (中): 具有透明电极的基板及其制造方法
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Application No.: US14374876Application Date: 2013-01-18
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Publication No.: US20140370275A1Publication Date: 2014-12-18
- Inventor: Takashi Kuchiyama , Hironori Hayakawa , Hiroaki Ueda , Takahisa Fujimoto , Kenji Yamamoto
- Applicant: KANEKA CORPORATION
- Applicant Address: JP Osaka-shi, Osaka
- Assignee: KANEKA CORPORATION
- Current Assignee: KANEKA CORPORATION
- Current Assignee Address: JP Osaka-shi, Osaka
- Priority: JP2012-015995 20120127
- International Application: PCT/JP2013/050923 WO 20130118
- Main IPC: H05K1/02
- IPC: H05K1/02 ; C23C14/58 ; C23C14/34 ; H05K1/09

Abstract:
The present invention relates to a substrate with a transparent electrode, which has a transparent electrode layer on at least one surface of a transparent film base material. The transparent film base material has a transparent dielectric material layer containing an oxide as a main component on a surface at the transparent electrode layer side. In one embodiment of the present invention, the transparent electrode layer is a crystalline transparent electrode layer that has a crystallinity degree of 80% or more. In this embodiment, the crystalline transparent electrode layer has a resistivity of 3.5×10−4 Ω·cm or less, a thickness of 15 nm to 40 nm, an indium oxide content of 87.5% to 95.5%, and a carrier density of 4×1020/cm3 to 9×1020/cm3, and the substrate with the transparent electrode preferably has a heat shrinkage start temperature of 75° C. to 120° C. as measured by thermomechanical analysis.
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