公开(公告)号：US10173393B2

公开(公告)日：2019-01-08

申请号：US15556895

申请日：2016-03-18

Applicant: KANEKA CORPORATION

Inventor： Hironori Hayakawa ,  Shinya Omoto ,  Takashi Kuchiyama

IPC: B32B7/02 ,  H01B5/14 ,  C23C14/08 ,  C23C14/34 ,  C23C14/58 ,  G06F3/041 ,  G06F3/044

Abstract: A transparent electrode-equipped substrate includes a metal oxide transparent electrode layer on a transparent substrate. The average maximum curvature Ssc of the surface of the transparent electrode layer is preferably 5.4×10−4 nm−1 or less. For example, if the transparent electrode layer is subjected to a surface treatment by low discharge-power sputtering after deposition, the Ssc of the transparent electrode layer can be reduced. This transparent electrode-equipped substrate excels in close adhesion between the transparent electrode layer and a lead-out wiring line disposed on the transparent electrode layer. The transparent electrode layer is obtained by, for example, performing a transparent electrode deposition step of through the application of a first discharge power and then performing a surface treatment step through the application of a second discharge power.

公开(公告)号：US09903015B2

公开(公告)日：2018-02-27

申请号：US14653805

申请日：2013-12-18

Applicant: KANEKA CORPORATION

Inventor： Hironori Hayakawa ,  Takashi Kuchiyama ,  Kenji Yamamoto

IPC: B32B15/04 ,  C23C14/34 ,  H05K1/09 ,  C23C14/08 ,  G06F3/044 ,  H05K3/16

CPC classification number: C23C14/34 ,  B32B2307/412 ,  B32B2307/702 ,  B32B2457/208 ,  C23C14/086 ,  C23C14/3414 ,  G06F3/044 ,  G06F2203/04103 ,  H05K1/09 ,  H05K3/16 ,  H05K2201/0326 ,  H05K2201/10053 ,  H05K2203/1194

Abstract: A substrate with a transparent electrode which includes an amorphous transparent electrode layer on a transparent film substrate. When a bias voltage of 0.1 V is applied to the amorphous transparent electrode layer, the layer has continuous regions where a current value at a voltage-applied surface is 50 nA or more. Each of the continuous regions has an area of 100 nm2 or more and the number of the continuous regions is 50/μm2 or more. In one embodiment, the layer has a tin oxide content of 6.5% or more and 8% or less by mass. In another embodiment, the layer has a tin oxide content of 6.5% or more and 8% or less by mass. With respect to the substrate with a transparent electrode according to the present invention, the transparent electrode layer may be crystallized in a short period of time.

公开(公告)号：US20170081754A1

公开(公告)日：2017-03-23

申请号：US15126265

申请日：2015-02-03

Applicant: KANEKA CORPORATION

Inventor： Hironori Hayakawa ,  Takashi Kuchiyama

IPC: C23C14/08 ,  C23C14/56 ,  C23C14/34

CPC classification number: C23C14/086 ,  C23C14/0036 ,  C23C14/34 ,  C23C14/562 ,  G06F3/041 ,  G06F3/044 ,  G06F2203/04103 ,  H01B1/08

Abstract: A transparent electroconductive film includes transparent electrode layer on a transparent film substrate. The transparent electrode layer is formed of an amorphous indium tin composite oxide and has a tin oxide content of 3 to 12% by mass and a thickness of 15 to 30 nm. In an analysis range of the transparent electrode layer, a bond energy ESn of tin 3d5/2 and a bond energy EIn of indium 3d5/2 as determined by X-ray photoelectron spectroscopy measurement satisfy the following requirements: a minimum point of a bond energy difference between the bond energies ESn and EIn is present closer to the surface of the transparent electrode layer than a maximum point of the bond energy difference ESn-EIn; and a difference Emax-Emin between the maximum value Emax and the minimum value Emin of the bond energy difference is 0.1 eV or more.

公开(公告)号：US20160351752A1

公开(公告)日：2016-12-01

申请号：US15114639

申请日：2015-01-19

Applicant: KANEKA CORPORATION

Inventor： Takashi Kuchiyama ,  Hironori Hayakawa ,  Hiroaki Ueda ,  Yuji Motohara ,  Kenji Yamamoto

IPC: H01L33/42 ,  C23C14/35 ,  C23C14/02 ,  H01L31/0224 ,  C23C14/08

CPC classification number: H01L33/42 ,  C23C14/024 ,  C23C14/083 ,  C23C14/086 ,  C23C14/35 ,  C23C14/5806 ,  G06F3/041 ,  G06F3/044 ,  G06F2203/04103 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/0392 ,  Y02E10/50

Abstract: Provided is a substrate with transparent electrode, which is capable of achieving both acceleration of crystallization during a heat treatment and suppression of crystallization under a normal temperature environment. In the substrate with transparent electrode, a transparent electrode thin-film formed of a transparent conductive oxide is formed on a film substrate. An underlayer that contains a metal oxide as a main component is formed between the film substrate and the transparent electrode thin-film. The underlayer and the transparent electrode thin-film are in contact with each other. The transparent electrode thin-film is amorphous, and the base layer is dielectric and crystalline.

Abstract translation: 本发明提供一种具有透明电极的基板，其能够实现加热处理期间的结晶加速和在常温环境下的结晶抑制。 在具有透明电极的基板中，在薄膜基板上形成由透明导电氧化物形成的透明电极薄膜。 在薄膜基板和透明电极薄膜之间形成以金属氧化物为主要成分的底层。 底层和透明电极薄膜彼此接触。 透明电极薄膜是非晶体，并且基底层是电介质和结晶的。

公开(公告)号：US20150225837A1

公开(公告)日：2015-08-13

申请号：US14424961

申请日：2013-08-23

Applicant: KANEKA CORPORATION

Inventor： Hironori Hayakawa ,  Takashi Kuchiyama ,  Hiroaki Ueda

IPC: C23C14/08 ,  H05K1/02 ,  H05K1/03 ,  C23C14/34 ,  C23C14/58

CPC classification number: C23C14/086 ,  C23C14/34 ,  C23C14/5806 ,  G06F3/041 ,  H05K1/0274 ,  H05K1/0306 ,  H05K1/09 ,  H05K3/16 ,  H05K3/22 ,  H05K3/388 ,  H05K2201/0104 ,  H05K2201/0108 ,  H05K2201/0175 ,  H05K2201/0179 ,  H05K2201/0326 ,  H05K2203/1194

Abstract: A resin substrate with a transparent electrode having a low resistance, and a manufacturing method thereof including: a deposition step wherein a transparent electrode layer of indium tin oxide is formed on a transparent film substrate by a sputtering method, and a crystallization step wherein the transparent electrode layer is crystallized. In the deposition step, a sputtering deposition is performed using a sputtering target containing indium oxide and tin oxide, while a sputtering gas containing argon and oxygen is introduced into a chamber. It is preferable that an effective exhaust rate S, calculated from a rate Q of the sputtering gas introduced into the chamber and a pressure P in the chamber by a formula S (L/second)=1.688×Q (sccm)/P (Pa), is 1,200-5,000 (L/second). It is also preferable that a resistivity of the transparent electrode layer is less than 3×10−4 Ωcm.

Abstract translation: 一种具有低电阻的透明电极的树脂基板及其制造方法，包括：沉积步骤，其中通过溅射法在透明膜基板上形成氧化铟锡的透明电极层，以及结晶步骤，其中透明 电极层结晶。 在沉积步骤中，使用包含氧化铟和氧化锡的溅射靶进行溅射沉积，同时将含有氩和氧的溅射气体引入室中。 优选的是，从引入室中的溅射气体的速率Q和室内的压力P通过公式S（L /秒）= 1.688×Q（sccm）/ P（Pa）计算出的有效排气速度S ）为1,200-5,000（L /秒）。 还优选的是，透明电极层的电阻率小于3×10-4＆OHgr·cm。

公开(公告)号：US11811003B2

公开(公告)日：2023-11-07

申请号：US17162642

申请日：2021-01-29

Applicant: KANEKA CORPORATION

Inventor： Takashi Kuchiyama

IPC: H01L33/42 ,  H01L31/0224 ,  H01L31/18

CPC classification number: H01L33/42 ,  H01L31/022466 ,  H01L31/1884 ,  H01L2933/0016

Abstract: A transparent electrode-equipped substrate includes, on a film base material having a transparent film substrate, a non-crystalline transparent foundation oxide layer and a non-crystalline transparent conductive oxide layer. The transparent electrode-equipped substrate is capable of achieving low resistivity by having the transparent oxide layers being formed sequentially from the film base material side through sputtering such that the absolute value of a discharge voltage (VU) of a direct-current (DC) power supply when forming the transparent foundation oxide layer is 255-280 V, the ratio (VU/VC) between the discharge voltage (VU) of the DC power supply when forming the transparent foundation oxide layer and the discharge voltage VC of the DC power supply when forming the transparent conductive oxide layer is 0.86-0.98.

公开(公告)号：US09549462B2

公开(公告)日：2017-01-17

申请号：US14780529

申请日：2014-03-03

Applicant: KANEKA CORPORATION

Inventor： Tooru Irie ,  Takahisa Fujimoto ,  Takashi Kuchiyama ,  Hironori Hayakawa ,  Shinya Omoto ,  Kenji Yamamoto

IPC: H05K1/09 ,  H05K1/02 ,  G06F3/044 ,  H05K1/03 ,  H05K3/00 ,  H05K3/06 ,  H05K3/22

CPC classification number: H05K1/0274 ,  G06F3/044 ,  G06F2203/04103 ,  G06F2203/04112 ,  H05K1/0296 ,  H05K1/0326 ,  H05K1/09 ,  H05K3/0064 ,  H05K3/06 ,  H05K3/067 ,  H05K3/108 ,  H05K3/227 ,  H05K3/388 ,  H05K2201/0108 ,  H05K2201/0145 ,  H05K2201/0317 ,  H05K2201/09663 ,  H05K2201/0979

Abstract: Provided is a transparent conductive film including a transparent electrode layer composed of a patterned thin metal wire on at least one surface of a transparent film substrate. The line width of the wire is 5 μm or less. The wire includes a first metal layer and a second metal layer that is in contact with the first metal layer, in this order from a transparent film substrate side. Both of the first and second metal layers contain copper in an amount of 90% by weight or more. The total film thickness of the first and second metal layers is 150 to 1000 nm. The diffraction angle 2θ of the (111) plane of the second metal layer is less than 43.400° as measured using a CuKα ray as an X-ray source, and the first metal layer has crystal properties different from those of the second metal layer.

Abstract translation: 提供一种透明导电膜，其包括在透明膜基板的至少一个表面上由图案化的金属细线构成的透明电极层。 线的线宽为5μm以下。 导线包括从透明膜基板一侧依次与第一金属层接触的第一金属层和第二金属层。 第一和第二金属层都含有90重量％以上的铜。 第一和第二金属层的总膜厚度为150〜1000nm。 使用CuKα射线作为X射线源测定的第二金属层的（111）面的衍射角2θ小于43.400°，第一金属层的结晶特性与第二金属层的晶体性质不同。

公开(公告)号：US11302829B2

公开(公告)日：2022-04-12

申请号：US16499175

申请日：2017-12-22

Applicant: KANEKA CORPORATION

Inventor： Kunihiro Nakano ,  Kunta Yoshikawa ,  Takashi Kuchiyama

IPC: H01L31/0216 ,  H01L31/0224 ,  H01L31/18

Abstract: A photovoltaic device according to the present disclosure includes: a first-conductivity-type semiconductor film provided on a back side of a semiconductor substrate; a second-conductivity-type semiconductor film in which at least a part thereof is provided in a position different, in plan view, from a position of the first-conductivity-type semiconductor film on the back side of the semiconductor substrate; a protective film, which is formed on a back side of the first-conductivity-type semiconductor film and a back side of the second-conductivity-type semiconductor film, and which includes a conductive portion and a non-conductive transformed portion; and an electrode film formed on a back side of the conductive portion. The transformed portion of the protective film is provided along a conduction path between a back surface of the first-conductivity-type semiconductor film and a back surface of the second-conductivity-type semiconductor film.

公开(公告)号：US10777709B2

公开(公告)日：2020-09-15

申请号：US16294100

申请日：2019-03-06

Applicant: KANEKA CORPORATION

Inventor： Takashi Kuchiyama ,  Hironori Hayakawa ,  Hiroaki Ueda ,  Yuji Motohara ,  Kenji Yamamoto

IPC: H01L33/42 ,  G06F3/041 ,  C23C14/02 ,  C23C14/08 ,  C23C14/58 ,  G06F3/044 ,  H01L31/0224 ,  H01L31/0392 ,  C23C14/35

Abstract: Provided is a substrate with transparent electrode, which is capable of achieving both acceleration of crystallization dining a heat treatment and suppression of crystallization under a normal temperature environment. In the substrate with transparent electrode, a transparent electrode thin-film formed of a transparent conductive oxide is formed on a film substrate. An underlayer that contains a metal oxide as a main component is formed between the film substrate and the transparent electrode thin-film. The underlayer and the transparent electrode thin-film are in contact with each other. The transparent electrode thin-film is amorphous, and the base layer is dielectric and crystalline.

公开(公告)号：US10662521B2

公开(公告)日：2020-05-26

申请号：US15880470

申请日：2018-01-25

Applicant: KANEKA CORPORATION

Inventor： Hironori Hayakawa ,  Takashi Kuchiyama ,  Kenji Yamamoto

IPC: B32B15/04 ,  B32B17/06 ,  C23C14/34 ,  H05K1/09 ,  C23C14/08 ,  G06F3/044 ,  H05K3/16

Abstract: A substrate with a transparent electrode which includes an amorphous transparent electrode layer on a transparent film substrate. When a bias voltage of 0.1 V is applied to the amorphous transparent electrode layer, the layer has continuous regions where a current value at a voltage-applied surface is 50 nA or more. Each of the continuous regions has an area of 100 nm2 or more and the number of the continuous regions is 50/μm2 or more. In one embodiment, the layer has a tin oxide content of 6.5% or more and 8% or less by mass. With respect to the substrate with a transparent electrode according to the present invention, the transparent electrode layer may be crystallized in a short period of time.