Invention Application
US20140370649A1 METHOD AND APPARATUS FOR FORMING COPPER(Cu) OR ANTIMONY(Sb) DOPED ZINC TELLURIDE AND CADMIUM ZINC TELLURIDE LAYERS IN A PHOTOVOLTAIC DEVICE
有权
用于形成光伏器件中的铜（Cu）或抗微生物（Sb）掺杂的ZINC陶瓷和铌酸锌层的方法和装置
- Patent Title: METHOD AND APPARATUS FOR FORMING COPPER(Cu) OR ANTIMONY(Sb) DOPED ZINC TELLURIDE AND CADMIUM ZINC TELLURIDE LAYERS IN A PHOTOVOLTAIC DEVICE
- Patent Title (中): 用于形成光伏器件中的铜（Cu）或抗微生物（Sb）掺杂的ZINC陶瓷和铌酸锌层的方法和装置
-
Application No.: US14136630Application Date: 2013-12-20
-
Publication No.: US20140370649A1Publication Date: 2014-12-18
- Inventor: Pawel Mrozek , Long Cheng
- Applicant: First Solar, Inc.
- Applicant Address: US OH Perrysburg
- Assignee: First Solar, Inc.
- Current Assignee: First Solar, Inc.
- Current Assignee Address: US OH Perrysburg
- Main IPC: H01L31/18
- IPC: H01L31/18 ; C25D7/12
Abstract:
A method and apparatus for an amount of Cu or Sb dopant incorporated into a zinc-based layer as the layer is being formed. The layer is formed over a coated substrate using an electrochemical deposition (ECD) process. In the ECD process, the bias voltage and plating solution composition may be systematically changed during the electrochemical deposition process to change the amount of Cu or Sb dopant incorporated into the plated layer.
Public/Granted literature
Information query
IPC分类:
