公开(公告)号：US20140374266A1

公开(公告)日：2014-12-25

申请号：US14136570

申请日：2013-12-20

Applicant: First Solar, Inc.

Inventor： Markus Gloeckler ,  Long Cheng

IPC: C25D7/12 ,  C25D17/00 ,  H01L31/18 ,  C25D21/12

CPC classification number: C25D7/12 ,  C25D17/001 ,  C25D21/12 ,  H01L21/02411 ,  H01L21/0248 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02562 ,  H01L31/1832

Abstract: A method and apparatus for controlling and changing the composition of a cadmium zinc telluride (CZT) transition layer as it is formed over a partially completed photovoltaic device using electrochemical deposition (ECD) where plating variables are systematically changed while the CZT transition layer is formed to change the composition of the plated CZT transition layer.

Abstract translation: 一种用于控制和改变碲化锌碲化镉（CZT）过渡层的组成的方法和装置，其在使用电化学沉积（ECD）的部分完成的光伏器件上形成，其中电镀变量在形成CZT过渡层时被系统地改变， 改变电镀CZT过渡层的组成。

公开(公告)号：US09269850B2

公开(公告)日：2016-02-23

申请号：US14136630

申请日：2013-12-20

Applicant: First Solar, Inc.

Inventor： Long Cheng ,  Pawel Mrozek

IPC: H01L31/18 ,  H01L21/02 ,  C25D7/12

CPC classification number: H01L31/1828 ,  C25D7/12 ,  C25D17/001 ,  C25D21/02 ,  C25D21/12 ,  H01L21/02411 ,  H01L21/0248 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02562 ,  H01L21/02579 ,  H01L21/02628

Abstract: A method and apparatus for an amount of Cu or Sb dopant incorporated into a zinc-based layer as the layer is being formed. The layer is formed over a coated substrate using an electrochemical deposition (ECD) process. In the ECD process, the bias voltage and plating solution composition may be systematically changed during the electrochemical deposition process to change the amount of Cu or Sb dopant incorporated into the plated layer.

Abstract translation: 在形成该层时，掺入锌基层中的Cu或Sb掺杂剂的量的方法和装置。 使用电化学沉积（ECD）工艺在涂覆的基底上形成该层。 在ECD工艺中，可以在电化学沉积工艺期间系统地改变偏置电压和电镀溶液组成，以改变掺入镀层中的Cu或Sb掺杂剂的量。

公开(公告)号：US20130314093A1

公开(公告)日：2013-11-28

申请号：US13900177

申请日：2013-05-22

Applicant: First Solar, Inc.

Inventor： Long Cheng ,  Markus Gloeckler

IPC: G01N17/02

CPC classification number: G01N17/02 ,  G01N27/416

Abstract: An inline metrology method and system using an electrolytic cell for measuring electrical characteristics of a semiconductor device, such as a photovoltaic device, during manufacture.

Abstract translation: 在制造期间使用用于测量诸如光伏器件的半导体器件的电特性的电解池的在线测量方法和系统。

公开(公告)号：US20140370649A1

公开(公告)日：2014-12-18

申请号：US14136630

申请日：2013-12-20

Applicant: First Solar, Inc.

Inventor： Pawel Mrozek ,  Long Cheng

IPC: H01L31/18 ,  C25D7/12

CPC classification number: H01L31/1828 ,  C25D7/12 ,  C25D17/001 ,  C25D21/02 ,  C25D21/12 ,  H01L21/02411 ,  H01L21/0248 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02562 ,  H01L21/02579 ,  H01L21/02628

Abstract: A method and apparatus for an amount of Cu or Sb dopant incorporated into a zinc-based layer as the layer is being formed. The layer is formed over a coated substrate using an electrochemical deposition (ECD) process. In the ECD process, the bias voltage and plating solution composition may be systematically changed during the electrochemical deposition process to change the amount of Cu or Sb dopant incorporated into the plated layer.

Abstract translation: 在形成该层时，掺入锌基层中的Cu或Sb掺杂剂的量的方法和装置。 使用电化学沉积（ECD）工艺在涂覆的基底上形成该层。 在ECD工艺中，可以在电化学沉积工艺期间系统地改变偏置电压和电镀溶液组成，以改变掺入镀层中的Cu或Sb掺杂剂的量。

公开(公告)号：US20130213814A1

公开(公告)日：2013-08-22

申请号：US13766069

申请日：2013-02-13

Applicant: First Solar, Inc.

Inventor： Jianjun Wang ,  Markus Gloeckler ,  Long Cheng ,  Oleh Petro Karpenko

IPC: G01N27/42 ,  H01L31/18

CPC classification number: G01N27/42 ,  H01L22/24 ,  H01L31/0322 ,  H01L31/073 ,  H01L31/0749 ,  H01L31/186 ,  H02S50/10 ,  Y02E10/541 ,  Y02E10/543 ,  Y02P70/521

Abstract: A method for forming a defect marker on a thin film of a photovoltaic device by plating to detect pinholes and/or electrical shunts during device fabrication is disclosed. Also disclosed is a system for implementing such a method.

Abstract translation: 公开了一种在器件制造期间通过电镀在光电器件的薄膜上形成缺陷标记以检测针孔和/或电分路的方法。 还公开了一种用于实现这种方法的系统。

公开(公告)号：US20140261685A1

公开(公告)日：2014-09-18

申请号：US14209094

申请日：2014-03-13

Applicant: FIRST SOLAR, INC.

Inventor： Feng Liao ,  Jigish Trivedi ,  Zhibo Zhao ,  Rick C. Powell ,  Long Cheng ,  Markus Gloeckler ,  Benyamin Buller ,  Igor Sankin ,  Jeremy Brewer

IPC: H01L31/0352 ,  H01L31/0203 ,  H01L31/0296

CPC classification number: H01L31/035272 ,  H01L31/0203 ,  H01L31/0296 ,  H01L31/1828 ,  Y02E10/543

Abstract: Embodiments include photovoltaic devices that include at least one absorber layer, e.g. CdTe and/or CdSxTe1-x (where 0≦x≦1), having an average grain size to thickness ratio from greater than 2 to about 50 and an average grain size of between about 4 μm and about 14 μm and methods for forming the same.

Abstract translation: 实施例包括光伏器件，其包括至少一个吸收层，例如 CdTe和/或CdSxTe1-x（其中0＆nlE; x＆nlE; 1），其平均晶粒尺寸与厚度之比大于2至约50，平均晶粒尺寸在约4μm至约14μm之间， 相同。

公开(公告)号：US20140261667A1

公开(公告)日：2014-09-18

申请号：US14209924

申请日：2014-03-13

Applicant: FIRST SOLAR, INC.

Inventor： Benyamin Buller ,  Igor Sankin ,  Long Cheng ,  Jigish Trivedi ,  Jianjun Wang ,  Kieran Tracy ,  Scott Christensen ,  Gang Xiong ,  Markus Gloeckler ,  San Yu

IPC: H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/1828 ,  H01L31/022425 ,  H01L31/02966 ,  H01L31/046 ,  H01L31/073 ,  H01L31/1832 ,  Y02E10/543

Abstract: A back electrode for a PV device and method of formation are disclosed. A ZnTe material is provided over an absorber material and a MoNx material is provided over the ZnTe material. A Mo material may also be included in the back electrode above or below the MoNx layer and a metal layer may be also provided over the MoNx layer.

Abstract translation: 公开了一种用于PV器件的背面电极和形成方法。 在吸收材料上提供ZnTe材料，并且在ZnTe材料上提供MoNx材料。 在MoNx层上方或下方的背电极中也可以包含Mo材料，也可以在MoNx层上设置金属层。