Invention Application
US20150014747A1 METHOD TO BRIDGE EXTRINSIC AND INTRINSIC BASE BY SELECTIVE EPITAXY IN BICMOS TECHNOLOGY
有权
通过选择性外延在BICMOS技术中桥接特征和内在基础的方法
- Patent Title: METHOD TO BRIDGE EXTRINSIC AND INTRINSIC BASE BY SELECTIVE EPITAXY IN BICMOS TECHNOLOGY
- Patent Title (中): 通过选择性外延在BICMOS技术中桥接特征和内在基础的方法
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Application No.: US14500021Application Date: 2014-09-29
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Publication No.: US20150014747A1Publication Date: 2015-01-15
- Inventor: James W. Adkisson , Kevin K. Chan , David L. Harame , Qizhi Liu , John J. Pekarik
- Applicant: International Business Machines Corporation
- Main IPC: H01L29/737
- IPC: H01L29/737 ; H01L29/08 ; H01L29/10 ; H01L29/16
Abstract:
A method of forming a heterojunction bipolar transistor. The method includes providing a structure comprising at least an intrinsic base region and an emitter pedestal region. A stack is formed on the intrinsic base region. The stack comprises a polysilicon layer and a top sacrificial oxide layer. A trench is formed in the structure. The trench circumscribes the intrinsic base region and the stack. An extrinsic base is formed at two regions around the stack. The extrinsic base is formed by a selective epitaxial growth process to create a bridge over the trench. The bridge connects the two regions. An opening is provided in the stack. The opening exposes a portion of the intrinsic base region. An emitter is formed in the opening.
Public/Granted literature
- US09202900B2 Method to bridge extrinsic and intrinsic base by selective epitaxy in BiCMOS technology Public/Granted day:2015-12-01
Information query
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