Invention Application
US20150031158A1 INTEGRATED CIRCUIT AND MANUFACTURING METHOD 有权
集成电路和制造方法

INTEGRATED CIRCUIT AND MANUFACTURING METHOD
Abstract:
Disclosed is an integrated circuit comprising a substrate (10) including at least one light sensor (12); an interconnect structure (20) over the substrate; at least one passivation layer (30) over the interconnect structure, said passivation layer including a first area over the at least one light sensor; and a gas sensor such as a moisture sensor (50) at least partially on a further area of the at least one passivation layer, wherein the gas sensor comprises a gas sensitive layer (46′) in between a first electrode (42) and a second electrode (44), the gas sensitive layer further comprising a portion (46″) over the first area. A method of manufacturing such an IC is also disclosed.
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