发明申请
- 专利标题： FET CHIP
- 专利标题（中）： FET芯片
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申请号： US14378219申请日： 2012-04-27
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公开(公告)号： US20150035066A1公开(公告)日： 2015-02-05
- 发明人: Hiroshi Otsuka , Toshiyuki Oishi , Eigo Kuwata , Takashi Yamasaki , Makoto Kimura , Masatoshi Nakayama
- 申请人： Hiroshi Otsuka , Toshiyuki Oishi , Eigo Kuwata , Takashi Yamasaki , Makoto Kimura , Masatoshi Nakayama
- 申请人地址： JP Tokyo
- 专利权人： MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人： MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人地址： JP Tokyo
- 国际申请： PCT/JP2012/002916 WO 20120427
- 主分类号： H01L27/088
- IPC分类号： H01L27/088 ; H01L23/66
摘要：
An FET chip is configured to include an oscillation suppression circuit that has a gate capacitance C formed between a gate electrode 5c and two-dimensional electron gas, and a channel resistance R between the gate electrode 5c and a source electrode 7c, and therefore the oscillation suppression circuit is loaded by only an FET process to make an MMIC design unnecessary, so that it is possible to attain stabilization of an FET while suppressing increase in cost, and to suppress oscillation.
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