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    SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
    半导体器件及制造半导体器件的方法

    公开(公告)号：US20130175544A1

    公开(公告)日：2013-07-11

    申请号：US13824357

    申请日：2010-11-10

    申请人： Toshiyuki Oishi ,  Hiroshi Otsuka ,  Koji Yamanaka ,  Kazuhisa Yamauchi ,  Masatake Hangai ,  Masatoshi Nakayama

    发明人： Toshiyuki Oishi ,  Hiroshi Otsuka ,  Koji Yamanaka ,  Kazuhisa Yamauchi ,  Masatake Hangai ,  Masatoshi Nakayama

    IPC分类号： H01L29/20 ,  H01L21/02

    CPC分类号： H01L29/2003 ,  H01L21/0254 ,  H01L29/0607 ,  H01L29/0657 ,  H01L29/205 ,  H01L29/7786

    摘要： It is an object to attain both high gain and a broad band (that is, to attain both reduction in a gate-drain capacitance and reduction in a source-drain capacitance). Provided is a semiconductor device, including: a GaN channel layer (3) through which electrons travel; a barrier layer (4) which is provided on the GaN channel layer in order to form two-dimensional electron gas in the GaN channel layer and which contains at least any one of In, Al, and Ga and contains N; a gate electrode (8), a source electrode (6), and a drain electrode (7); and a plate (20) formed of a material having polarization, which is provided between the gate electrode (8) and the drain electrode (7), the plate being held in contact with a part of the barrier layer (4).

    摘要翻译： 本发明的目的是获得高增益和宽带（即，获得栅极 - 漏极电容的减小和源极 - 漏极电容的减小）。 提供了一种半导体器件，包括：电子行进通过的GaN沟道层（3）; 阻挡层（4），其设置在所述GaN沟道层上，以在所述GaN沟道层中形成二维电子气，并且其包含In，Al和Ga中的至少任一个并且包含N; 栅电极（8），源电极（6）和漏电极（7）; 以及设置在所述栅极（8）和所述漏电极（7）之间的具有偏振材料的板（20），所述板与所述阻挡层（4）的一部分保持接触。

    OUTPUT MODE SWITCHING AMPLIFIER
    4.
    发明申请
    OUTPUT MODE SWITCHING AMPLIFIER 审中-公开
    输出模式开关放大器

    公开(公告)号：US20130113561A1

    公开(公告)日：2013-05-09

    申请号：US13810388

    申请日：2010-10-21

    申请人： Kenichi Horiguchi ,  Naoko Matsunaga ,  Hiroshi Otsuka ,  Masatoshi Nakayama ,  Kazuhiro Iyomasa ,  Akira Inoue

    发明人： Kenichi Horiguchi ,  Naoko Matsunaga ,  Hiroshi Otsuka ,  Masatoshi Nakayama ,  Kazuhiro Iyomasa ,  Akira Inoue

    IPC分类号： H03F3/04

    CPC分类号： H03F3/04 ,  H03F1/0277 ,  H03F3/19 ,  H03F3/245 ,  H03F3/60 ,  H03F3/72 ,  H03F2203/7239

    摘要： An output mode switching amplifier, including: a transistor for signal amplification connected between a first node on an input side and a second node on an output side; a bypass path for bypassing the transistor between the first node and the second node; a voltage control circuit for switching whether to apply a bias voltage to the transistor so that a transmission signal is amplified by the transistor or to output a transmission signal via the bypass path without amplifying the transmission signal by the transistor; and a second-harmonic reflection circuit connected to the bypass path, for reflecting a second harmonic of the transmission signal.

    摘要翻译： 一种输出模式切换放大器，包括：用于信号放大的晶体管，连接在输入侧的第一节点和输出侧的第二节点之间; 用于绕过第一节点和第二节点之间的晶体管的旁路路径; 电压控制电路，用于切换是否向晶体管施加偏置电压，使得透射信号被晶体管放大或经由旁路路径输出发送信号，而不会由晶体管放大发送信号; 以及连接到所述旁路路径的二次谐波反射电路，用于反射所述发送信号的二次谐波。

    High Efficiency Amplifier
    6.
    发明申请
    High Efficiency Amplifier 失效
    高效放大器

    公开(公告)号：US20090206926A1

    公开(公告)日：2009-08-20

    申请号：US11921504

    申请日：2006-07-31

    申请人： Kenichi Horiguchi ,  Satoru Ishizaka ,  Kazuhisa Yamauchi ,  Masatoshi Nakayama

    发明人： Kenichi Horiguchi ,  Satoru Ishizaka ,  Kazuhisa Yamauchi ,  Masatoshi Nakayama

    IPC分类号： H03F3/68

    CPC分类号： H03F1/0288

    摘要： When an input signal level is small, the electrical length of a phase line 21 and the electrical length of a phase line 23 are set in such a manner that the impedance seen by looking into the output side from an impedance reference point 11 at the output side of a carrier amplifier 3 becomes 2R+α (where R is a load resistance and α is positive), and the electrical length of a phase line 22 is set at a difference between the electrical length of the phase line 21 and the electrical length of the phase line 23.

    摘要翻译： 当输入信号电平小时，相线21的电长度和相线23的电长度被设定为使得通过在输出处从阻抗参考点11观察输出侧看到的阻抗 载波放大器3的一侧变为2R +α（其中R是负载电阻，α为正），相线22的电长度被设定为相线21的电长度与电长度 的相线23。

    Linearizer
    7.
    发明授权
    Linearizer 失效
    线性化器

    公开(公告)号：US07557654B2

    公开(公告)日：2009-07-07

    申请号：US11660136

    申请日：2004-10-28

    申请人： Hifumi Noto ,  Kazuhisa Yamauchi ,  Yoshihiro Hamamatsu ,  Tomokazu Hamada ,  Masatoshi Nakayama

    发明人： Hifumi Noto ,  Kazuhisa Yamauchi ,  Yoshihiro Hamamatsu ,  Tomokazu Hamada ,  Masatoshi Nakayama

    IPC分类号： H03F1/26 ,  H03F1/30

    CPC分类号： H03F1/3276 ,  H03F1/3223 ,  H03F2200/468

    摘要： A linearizer changes a gain characteristic to a valley characteristic in which a gain reduces and then increases. The linearizer includes: a signal path in which an RF signal input terminal an input side bias blocking capacitor, a diode pair, including diodes having opposite polarities to each other, an output side bias blocking capacitor and an RF signal output terminal in series in the stated order; a bias circuit in which a resistor is provided between and a signal path formed between the input side bias blocking capacitor and the diode pair and a bias terminal; an RF short-circuiting capacitor whose one end is connected with the bias circuit between the bias terminal and the resistor and whose other end is grounded; and a DC feed inductor whose one end is connected with the signal path between the diode pair and the output side bias blocking capacitor and whose other end is grounded.

    摘要翻译： 线性化器将增益特性改变为增益减小然后增加的谷特性。 线性化装置包括：信号路径，其中RF信号输入端子，输入侧偏置阻塞电容器，二极管对，包括彼此具有相反极性的二极管，输出侧偏置阻塞电容器和RF信号输出端子串联连接 命令; 在其间设置有电阻器和在输入侧偏置阻断电容器和二极管对之间形成的信号路径和偏置端子之间的偏置电路; RF短路电容器，其一端与偏置端子和电阻器之间的偏置电路连接，另一端接地; 以及直流馈电电感，其一端与二极管对和输出侧偏压电容之间的信号路径连接，另一端接地。

    Thin-film magnetic head, method for producing the same and magnetic disk device using the same
    8.
    发明授权
    Thin-film magnetic head, method for producing the same and magnetic disk device using the same 失效
    薄膜磁头及其制造方法以及使用其的磁盘装置

    公开(公告)号：US06995948B2

    公开(公告)日：2006-02-07

    申请号：US10617560

    申请日：2003-07-11

    申请人： Masatoshi Nakayama

    发明人： Masatoshi Nakayama

    IPC分类号： G11B5/255

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  C23C16/26 ,  C23C16/30 ,  G11B5/102 ,  G11B5/255 ,  G11B5/3106 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/3996 ,  Y10T29/49021

    摘要： A magnetoresistive thin-film magnetic head with high corrosion resistance for recording medium having massive capacity is provided by providing a protective film having a thickness of 40 Å or less. Since the distance between the head and the medium is remarkably reduced, the film is suitable for a recording medium having high-packing density. The magnetoresistive type thin-film magnetic head is provided, wherein the following layers are formed on at least the surface of the head facing a recording medium: (A) a lower layer composed of a thin film having the composition represented by the formula selected from the group consisting of: formula (i): SiCXHYOZNWFTBUPV (where X=0.5–26, Y=0.5–13, Z=0–6, W=0–6, T=0–6, U=0–1 and V=0–1, in terms of atomic ratio), and formula (ii): SiHYOZNWFTBUPV (where Y=0.0001–0.7, Z=0–6, W=0–6, T=0–6, U=0–1 and V=0–1); and (B) an upper layer composed of a diamond-like thin film having the composition represented by the following formula: CHaObNcFdBePf (where a=0–0.7, b=0–1, c=0–1, d=0–1, e=0–1 and f=0–1), and the total thickness of the lower layer and the upper layer is 40 Å or less. Also provided are a method for producing the same, and a magnetic head device using the same.

    摘要翻译： 通过提供厚度为40埃以下的保护膜，提供具有大容量记录介质的具有高耐腐蚀性的磁阻薄膜磁头。 由于头和介质之间的距离显着降低，所以该膜适用于具有高堆积密度的记录介质。 提供了磁阻型薄膜磁头，其中在面向记录介质的头部的至少表面上形成以下层：（A）由具有由下式表示的组成的薄膜组成的下层： 该组组成

    Method of producing protected thermal head
    10.
    发明授权
    Method of producing protected thermal head 失效
    生产保护热头的方法

    公开(公告)号：US06471832B1

    公开(公告)日：2002-10-29

    申请号：US08641855

    申请日：1996-05-02

    申请人： Masatoshi Nakayama ,  Masahiro Nakano ,  Tsukimi Endo

    发明人： Masatoshi Nakayama ,  Masahiro Nakano ,  Tsukimi Endo

    IPC分类号： C23C1434

    CPC分类号： B41J2/345

    摘要： A method of producing a wear-resistant protective film for a thermal head comprises depositing a wear-resistant protective film by sputtering on a thermal head which includes a substrate, and a heat-developing layer and a pair of electrodes formed on either the substrate or a heat-regenerative layer formed thereon. A layer of the wear resistant protective film is formed under a RF larger bias and another layer without a bias or with a smaller bias. Good step coverage is obtained by the RF sputter layer of the wear-resistant and the protective film prevents the intrusion of water that can cause cracking, and the layer formed under no or smaller bias reduces internal stresses and inhibits the development of cracks due to internal stresses as well as the cracking by RF sputtering.

    摘要翻译： 制造用于热敏头的耐磨保护膜的方法包括通过溅射将耐磨保护膜沉积在包括基底的热敏头上，以及形成在基底上的热显影层和一对电极 形成在其上的热再生层。 在RF较大的偏压下形成耐磨保护膜层，而在没有偏压或较小偏压的情况下形成另一层。 耐磨层的RF溅射层获得良好的阶梯覆盖，保护膜防止可能引起裂纹的水侵入，而在没有或较小偏置的条件下形成的层会降低内部应力，并抑制内部产生裂缝的发展 应力以及RF溅射的裂纹。