Invention Application
US20150048478A1 TRENCH ISOLATION FOR BIPOLAR JUNCTION TRANSISTORS IN BICMOS TECHNOLOGY
有权
BICMOS技术中双极性晶体管的分离分离
- Patent Title: TRENCH ISOLATION FOR BIPOLAR JUNCTION TRANSISTORS IN BICMOS TECHNOLOGY
- Patent Title (中): BICMOS技术中双极性晶体管的分离分离
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Application No.: US14496430Application Date: 2014-09-25
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Publication No.: US20150048478A1Publication Date: 2015-02-19
- Inventor: James S. Dunn , Qizhi Liu
- Applicant: International Business Machines Corporation
- Main IPC: H01L29/732
- IPC: H01L29/732 ; H01L29/08 ; H01L29/10 ; H01L29/06
Abstract:
Device structures and design structures for a bipolar junction transistor. A first isolation structure is formed in a substrate to define a boundary for a device region. A collector is formed in the device region, and a second isolation structure is formed in the device region. The second isolation structure defines a boundary for the collector. The second isolation structure is laterally positioned relative to the first isolation structure to define a section of the device region between the first and second isolation structures.
Public/Granted literature
- US09337323B2 Trench isolation for bipolar junction transistors in BiCMOS technology Public/Granted day:2016-05-10
Information query
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