发明申请
- 专利标题： SEMICONDUCTOR DEVICE INCLUDING A MOSFET
- 专利标题（中）： 包括MOSFET的半导体器件
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申请号： US14528177申请日： 2014-10-30
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公开(公告)号： US20150054069A1公开(公告)日： 2015-02-26
- 发明人: Nobuyuki SHIRAI , Nobuyoshi MATSUURA , Yoshito NAKAZAWA
- 申请人： RENESAS ELECTRONICS CORPORATION
- 优先权： JP2001-329620 20011026
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/06 ; H01L29/423 ; H01L29/20 ; H01L27/06 ; H01L29/47
摘要：
A semiconductor device for use in a power supply circuit has first and second MOSFETS. The source-drain path of one of the MOSFETS are coupled to the source-drain path of the other, and a load element is coupled to a connection node of the source-drain paths. The second MOSFET is formed on a semiconductor substrate with a Schottky barrier diode. First gate electrodes of the second MOSFET are formed in trenches in a first region of the semiconductor substrate, while second gate electrodes of the second MOSFET are formed in trenches in a second region of the semiconductor substrate. The first and second gate electrodes are electrically connected together. Portions of the Schottky barrier diode are formed between adjacent ones of the second gate electrodes. A center-to-center spacing between adjacent first gate electrodes is smaller than a center-to-center spacing between adjacent second gate electrodes.
公开/授权文献
- US09099550B2 Semiconductor device including a MOSFET 公开/授权日：2015-08-04
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